Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors

Recently, tellurium (Te) has been proposed as a promising p-type material; however, even the state-of-the-art results couldn't overcome the critical roadblocks for its practical applications, such as large - hysteresis and high off-state leakage current. We developed a novel Te atomic layer dep...

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Veröffentlicht in:	Nanoscale horizons 2024-10, Vol.9 (11), p.1990-1998
Hauptverfasser:	Kim, Minjae, Lee, Yongsu, Kim, Kyuheon, Pham, Giang-Hoang, Kim, Kiyung, Jun, Jae Hyeon, Lee, Hae-Won, Yoon, Seongbeen, Hwang, Hyeon Jun, Sung, Myung Mo, Lee, Byoung Hun
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer epitaxy Atomic properties Field effect transistors Hysteresis Leakage current Optimization P-type semiconductors Passivity Semiconductor devices Tellurium
Online-Zugang:	Volltext
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