Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate
The electroluminescence (EL) properties of InGaN-based micro-LEDs grown on a silicon substrate are investigated in this Letter to reveal the dominant mechanism in dependence on different temperatures and dimensions. The invalidation of sidewall nonradiative recombination and the impact of localizati...
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| Veröffentlicht in: | Optics letters 2024-09, Vol.49 (17), p.4867 |
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| container_title | Optics letters |
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| creator | Zheng, Xi Tong, Changdong Liu, Yu Ai, Sidan Fu, Yi Zhou, Mingbing Huang, Tao Lu, Yijun Chen, Zhong Guo, Weijie |
| description | The electroluminescence (EL) properties of InGaN-based micro-LEDs grown on a silicon substrate are investigated in this Letter to reveal the dominant mechanism in dependence on different temperatures and dimensions. The invalidation of sidewall nonradiative recombination and the impact of localization-induced carrier tunneling on the external quantum efficiency (EQE) are analyzed systematically to realize high performance silicon-based micro-LEDs. Microscopic EL mapping exhibits that the localized carriers in the silicon-grown micro-LED mainly recombine in the central region of mesa. The defects in the multiple quantum wells (MQWs) grown on the silicon substrate can lead to carrier tunneling and EQE reduction at cryogenic temperatures below 200 K, which is more conspicuous for the 30 μm device with a larger inner area ratio. The low-temperature EQE evolution can be attributed to the trade-off between localization-induced tunneling and Shockley-Read-Hall (SRH) recombination. |
| doi_str_mv | 10.1364/OL.534771 |
| format | Article |
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The invalidation of sidewall nonradiative recombination and the impact of localization-induced carrier tunneling on the external quantum efficiency (EQE) are analyzed systematically to realize high performance silicon-based micro-LEDs. Microscopic EL mapping exhibits that the localized carriers in the silicon-grown micro-LED mainly recombine in the central region of mesa. The defects in the multiple quantum wells (MQWs) grown on the silicon substrate can lead to carrier tunneling and EQE reduction at cryogenic temperatures below 200 K, which is more conspicuous for the 30 μm device with a larger inner area ratio. 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The invalidation of sidewall nonradiative recombination and the impact of localization-induced carrier tunneling on the external quantum efficiency (EQE) are analyzed systematically to realize high performance silicon-based micro-LEDs. Microscopic EL mapping exhibits that the localized carriers in the silicon-grown micro-LED mainly recombine in the central region of mesa. The defects in the multiple quantum wells (MQWs) grown on the silicon substrate can lead to carrier tunneling and EQE reduction at cryogenic temperatures below 200 K, which is more conspicuous for the 30 μm device with a larger inner area ratio. The low-temperature EQE evolution can be attributed to the trade-off between localization-induced tunneling and Shockley-Read-Hall (SRH) recombination.</description><subject>Carrier recombination</subject><subject>Cryogenic temperature</subject><subject>Impact analysis</subject><subject>Indium gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Localization</subject><subject>Low temperature</subject><subject>Multi Quantum Wells</subject><subject>Quantum efficiency</subject><subject>Silicon substrates</subject><subject>Temperature dependence</subject><issn>0146-9592</issn><issn>1539-4794</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpdkT1PHDEQhq2ICA5IwR9AlmiSYom_1h9ldJADaZVrQr3yesfBp_2KvatTqvz1ONxBQTWj0TOPZvQidEXJLeVSfN1WtyUXStEPaEVLbgqhjDhBK0KFLExp2Bk6T2lHCJGK81N0xg0jymixQn-r0IcZWhz6yboZjx7Pz4BTaGFvuw6D95DHYcAtTDC0MDh4gaCfINp5iYD9GPHjsLE_isamrGq6BXAfXByL6v4u4V9x3A94HLDN3i643KWlSXNeh0v00dsuwadjvUBP3-9_rh-Kart5XH-rCkepFgV3jfIAhjAlhRaUey-Zs8wIYFQS5Y3WpWwkzwC3mjruNCmBOcYcp4LxC_T54J3i-HuBNNd9SA66zg4wLqnmxBhlDJE6ozfv0N24xCFfV3NKWMnKUqtMfTlQ-c2UIvh6iqG38U9NSf0_lXpb1YdUMnt9NC5ND-0b-RoD_weMSIWn</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>Zheng, Xi</creator><creator>Tong, Changdong</creator><creator>Liu, Yu</creator><creator>Ai, Sidan</creator><creator>Fu, Yi</creator><creator>Zhou, Mingbing</creator><creator>Huang, Tao</creator><creator>Lu, Yijun</creator><creator>Chen, Zhong</creator><creator>Guo, Weijie</creator><general>Optical Society of America</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-1247-6597</orcidid><orcidid>https://orcid.org/0000-0001-9635-3342</orcidid></search><sort><creationdate>20240901</creationdate><title>Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate</title><author>Zheng, Xi ; Tong, Changdong ; Liu, Yu ; Ai, Sidan ; Fu, Yi ; Zhou, Mingbing ; Huang, Tao ; Lu, Yijun ; Chen, Zhong ; Guo, Weijie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1184-3cb7fee9027648413ff62ca294e21607f98856b630273a81c3c805e2c22c31423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Carrier recombination</topic><topic>Cryogenic temperature</topic><topic>Impact analysis</topic><topic>Indium gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Localization</topic><topic>Low temperature</topic><topic>Multi Quantum Wells</topic><topic>Quantum efficiency</topic><topic>Silicon substrates</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zheng, Xi</creatorcontrib><creatorcontrib>Tong, Changdong</creatorcontrib><creatorcontrib>Liu, Yu</creatorcontrib><creatorcontrib>Ai, Sidan</creatorcontrib><creatorcontrib>Fu, Yi</creatorcontrib><creatorcontrib>Zhou, Mingbing</creatorcontrib><creatorcontrib>Huang, Tao</creatorcontrib><creatorcontrib>Lu, Yijun</creatorcontrib><creatorcontrib>Chen, Zhong</creatorcontrib><creatorcontrib>Guo, Weijie</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zheng, Xi</au><au>Tong, Changdong</au><au>Liu, Yu</au><au>Ai, Sidan</au><au>Fu, Yi</au><au>Zhou, Mingbing</au><au>Huang, Tao</au><au>Lu, Yijun</au><au>Chen, Zhong</au><au>Guo, Weijie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate</atitle><jtitle>Optics letters</jtitle><addtitle>Opt Lett</addtitle><date>2024-09-01</date><risdate>2024</risdate><volume>49</volume><issue>17</issue><spage>4867</spage><pages>4867-</pages><issn>0146-9592</issn><issn>1539-4794</issn><eissn>1539-4794</eissn><abstract>The electroluminescence (EL) properties of InGaN-based micro-LEDs grown on a silicon substrate are investigated in this Letter to reveal the dominant mechanism in dependence on different temperatures and dimensions. The invalidation of sidewall nonradiative recombination and the impact of localization-induced carrier tunneling on the external quantum efficiency (EQE) are analyzed systematically to realize high performance silicon-based micro-LEDs. Microscopic EL mapping exhibits that the localized carriers in the silicon-grown micro-LED mainly recombine in the central region of mesa. The defects in the multiple quantum wells (MQWs) grown on the silicon substrate can lead to carrier tunneling and EQE reduction at cryogenic temperatures below 200 K, which is more conspicuous for the 30 μm device with a larger inner area ratio. The low-temperature EQE evolution can be attributed to the trade-off between localization-induced tunneling and Shockley-Read-Hall (SRH) recombination.</abstract><cop>United States</cop><pub>Optical Society of America</pub><pmid>39207984</pmid><doi>10.1364/OL.534771</doi><orcidid>https://orcid.org/0000-0002-1247-6597</orcidid><orcidid>https://orcid.org/0000-0001-9635-3342</orcidid></addata></record> |
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| ispartof | Optics letters, 2024-09, Vol.49 (17), p.4867 |
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| source | Optica Publishing Group Journals |
| subjects | Carrier recombination Cryogenic temperature Impact analysis Indium gallium nitrides Light emitting diodes Localization Low temperature Multi Quantum Wells Quantum efficiency Silicon substrates Temperature dependence |
| title | Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate |
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