Orders-of-Magnitude Reduction of the Contact Resistance in Short-Channel Hot Embossed Organic Thin Film Transistors by Oxidative Treatment of Au-Electrodes

Orders-of-Magnitude Reduction of the Contact Resistance in Short-Channel Hot Embossed Organic Thin Film Transistors by Oxidative Treatment of Au-Electrodes

In this study we report on the optimization of the contact resistance by surface treatment in short‐channel bottom‐contact OTFTs based on pentacene as semiconductor and SiO2 as gate dielectric. The devices have been fabricated by means of nanoimprint lithography with channel lengths in the range of...

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Veröffentlicht in:Advanced functional materials 2007-10, Vol.17 (15), p.2687-2692
Hauptverfasser: Stadlober, B., Haas, U., Gold, H., Haase, A., Jakopic, G., Leising, G., Koch, N., Rentenberger, S., Zojer, E.
Format: Artikel
Sprache:eng
Schlagworte:
Pentacenes
Surface modification
Thin-film transistors
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Zusammenfassung:In this study we report on the optimization of the contact resistance by surface treatment in short‐channel bottom‐contact OTFTs based on pentacene as semiconductor and SiO2 as gate dielectric. The devices have been fabricated by means of nanoimprint lithography with channel lengths in the range of 0.3 μm 
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.200700294