Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge2Sb2Te5 (GST) was used as the active phase-change material in the memory device and the active...

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Veröffentlicht in:	Applied surface science 2007-10, Vol.254 (1), p.316-320
Hauptverfasser:	YOON, Sung-Min, CHOI, Kyu-Jeong, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition and phase identification Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Phase transitions and critical phenomena Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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