Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer

Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved fi...

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Veröffentlicht in:Advanced materials (Weinheim) 2007-10, Vol.19 (20), p.3371-3376
Hauptverfasser: Niu, Y. H., Munro, A. M., Cheng, Y.-J., Tian, Y. Q., Liu, M. S., Zhao, J. L., Bardecker, J. A., Jen-La Plante, I., Ginger, D. S., Jen, A. K.-Y.
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container_issue 20
container_start_page 3371
container_title Advanced materials (Weinheim)
container_volume 19
creator Niu, Y. H.
Munro, A. M.
Cheng, Y.-J.
Tian, Y. Q.
Liu, M. S.
Zhao, J. L.
Bardecker, J. A.
Jen-La Plante, I.
Ginger, D. S.
Jen, A. K.-Y.
description Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.
doi_str_mv 10.1002/adma.200602373
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30961628</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>30961628</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3393-9ca581bd2078745125f69703f667eb169977a5649d91bfcdc1499e36b95712a63</originalsourceid><addsrcrecordid>eNqFkEtPAjEUhRujiYhuXXflbrCdTlu6REEgAR8JxmVTZu5AdR7YdlD-vUMwRleu7uKc7yT3Q-iSkh4lJL42WWl6MSGCxEyyI9ShPKZRQhQ_Rh2iGI-USPqn6Mz7V0KIEkR0UDMtN67eQoYfweW1K02VAs5dXeJ5UwRbmB04_NSYKjQlHtYBz-xqHaJRaUOw1QoPbZ2Bx1tr8GINLV_gQVWBKfZhneOwhr_4fvAcneSm8HDxfbvo-W60uJ1Es4fx9HYwi1LGFItUanifLrOYyL5MOI15LpQkLBdCwpIKpaQ0XCQqU3SZp1lKE6WAiaXiksZGsC66Ouy2P7434IMurU-hKEwFdeM1ay1QEffbYu9QTF3tvYNcb5wtjdtpSvTert7b1T92W0AdgA9bwO6fth4M54PfbHRgrQ_w-cMa96aFZJLrl_uxnkh5M5yIiU7YF76qjV4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30961628</pqid></control><display><type>article</type><title>Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Niu, Y. H. ; Munro, A. M. ; Cheng, Y.-J. ; Tian, Y. Q. ; Liu, M. S. ; Zhao, J. L. ; Bardecker, J. A. ; Jen-La Plante, I. ; Ginger, D. S. ; Jen, A. K.-Y.</creator><creatorcontrib>Niu, Y. H. ; Munro, A. M. ; Cheng, Y.-J. ; Tian, Y. Q. ; Liu, M. S. ; Zhao, J. L. ; Bardecker, J. A. ; Jen-La Plante, I. ; Ginger, D. S. ; Jen, A. K.-Y.</creatorcontrib><description>Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200602373</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Hole-transport materials ; Light-emitting diodes ; Nanocrystals ; Quantum dots ; Thermal crosslink</subject><ispartof>Advanced materials (Weinheim), 2007-10, Vol.19 (20), p.3371-3376</ispartof><rights>Copyright © 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3393-9ca581bd2078745125f69703f667eb169977a5649d91bfcdc1499e36b95712a63</citedby><cites>FETCH-LOGICAL-c3393-9ca581bd2078745125f69703f667eb169977a5649d91bfcdc1499e36b95712a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.200602373$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.200602373$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,778,782,1414,27907,27908,45557,45558</link.rule.ids></links><search><creatorcontrib>Niu, Y. H.</creatorcontrib><creatorcontrib>Munro, A. M.</creatorcontrib><creatorcontrib>Cheng, Y.-J.</creatorcontrib><creatorcontrib>Tian, Y. Q.</creatorcontrib><creatorcontrib>Liu, M. S.</creatorcontrib><creatorcontrib>Zhao, J. L.</creatorcontrib><creatorcontrib>Bardecker, J. A.</creatorcontrib><creatorcontrib>Jen-La Plante, I.</creatorcontrib><creatorcontrib>Ginger, D. S.</creatorcontrib><creatorcontrib>Jen, A. K.-Y.</creatorcontrib><title>Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer</title><title>Advanced materials (Weinheim)</title><addtitle>Adv. Mater</addtitle><description>Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.</description><subject>Hole-transport materials</subject><subject>Light-emitting diodes</subject><subject>Nanocrystals</subject><subject>Quantum dots</subject><subject>Thermal crosslink</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPAjEUhRujiYhuXXflbrCdTlu6REEgAR8JxmVTZu5AdR7YdlD-vUMwRleu7uKc7yT3Q-iSkh4lJL42WWl6MSGCxEyyI9ShPKZRQhQ_Rh2iGI-USPqn6Mz7V0KIEkR0UDMtN67eQoYfweW1K02VAs5dXeJ5UwRbmB04_NSYKjQlHtYBz-xqHaJRaUOw1QoPbZ2Bx1tr8GINLV_gQVWBKfZhneOwhr_4fvAcneSm8HDxfbvo-W60uJ1Es4fx9HYwi1LGFItUanifLrOYyL5MOI15LpQkLBdCwpIKpaQ0XCQqU3SZp1lKE6WAiaXiksZGsC66Ouy2P7434IMurU-hKEwFdeM1ay1QEffbYu9QTF3tvYNcb5wtjdtpSvTert7b1T92W0AdgA9bwO6fth4M54PfbHRgrQ_w-cMa96aFZJLrl_uxnkh5M5yIiU7YF76qjV4</recordid><startdate>20071019</startdate><enddate>20071019</enddate><creator>Niu, Y. H.</creator><creator>Munro, A. M.</creator><creator>Cheng, Y.-J.</creator><creator>Tian, Y. Q.</creator><creator>Liu, M. S.</creator><creator>Zhao, J. L.</creator><creator>Bardecker, J. A.</creator><creator>Jen-La Plante, I.</creator><creator>Ginger, D. S.</creator><creator>Jen, A. K.-Y.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20071019</creationdate><title>Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer</title><author>Niu, Y. H. ; Munro, A. M. ; Cheng, Y.-J. ; Tian, Y. Q. ; Liu, M. S. ; Zhao, J. L. ; Bardecker, J. A. ; Jen-La Plante, I. ; Ginger, D. S. ; Jen, A. K.-Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3393-9ca581bd2078745125f69703f667eb169977a5649d91bfcdc1499e36b95712a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Hole-transport materials</topic><topic>Light-emitting diodes</topic><topic>Nanocrystals</topic><topic>Quantum dots</topic><topic>Thermal crosslink</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Niu, Y. H.</creatorcontrib><creatorcontrib>Munro, A. M.</creatorcontrib><creatorcontrib>Cheng, Y.-J.</creatorcontrib><creatorcontrib>Tian, Y. Q.</creatorcontrib><creatorcontrib>Liu, M. S.</creatorcontrib><creatorcontrib>Zhao, J. L.</creatorcontrib><creatorcontrib>Bardecker, J. A.</creatorcontrib><creatorcontrib>Jen-La Plante, I.</creatorcontrib><creatorcontrib>Ginger, D. S.</creatorcontrib><creatorcontrib>Jen, A. K.-Y.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Niu, Y. H.</au><au>Munro, A. M.</au><au>Cheng, Y.-J.</au><au>Tian, Y. Q.</au><au>Liu, M. S.</au><au>Zhao, J. L.</au><au>Bardecker, J. A.</au><au>Jen-La Plante, I.</au><au>Ginger, D. S.</au><au>Jen, A. K.-Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2007-10-19</date><risdate>2007</risdate><volume>19</volume><issue>20</issue><spage>3371</spage><epage>3376</epage><pages>3371-3376</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/adma.200602373</doi><tpages>6</tpages></addata></record>
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source Wiley Online Library Journals Frontfile Complete
subjects Hole-transport materials
Light-emitting diodes
Nanocrystals
Quantum dots
Thermal crosslink
title Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T15%3A55%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20Performance%20from%20Multilayer%20Quantum%20Dot%20Light-Emitting%20Diodes%20via%20Thermal%20Annealing%20of%20the%20Quantum%20Dot%20Layer&rft.jtitle=Advanced%20materials%20(Weinheim)&rft.au=Niu,%20Y.%20H.&rft.date=2007-10-19&rft.volume=19&rft.issue=20&rft.spage=3371&rft.epage=3376&rft.pages=3371-3376&rft.issn=0935-9648&rft.eissn=1521-4095&rft_id=info:doi/10.1002/adma.200602373&rft_dat=%3Cproquest_cross%3E30961628%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=30961628&rft_id=info:pmid/&rfr_iscdi=true