Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures
Issue Title: Special Section: Organic Electronics; Guest Editor: Amlan J. Pal Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The [theta...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2007-09, Vol.18 (9), p.973-976 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 976 |
|---|---|
| container_issue | 9 |
| container_start_page | 973 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 18 |
| creator | QIN, W. F XIONG, J ZHU, J TANG, J. L JIE, W. J WEI, X. H ZHANG, Y LI, Y. R |
| description | Issue Title: Special Section: Organic Electronics; Guest Editor: Amlan J. Pal Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The [theta]-2[theta] scans showed single crystalline BST and LNO layers with a (100) orientations perpendicular to the substrate plane. Phi scans () on the (220) plane of BST layer indicated that the films have two in-plane orientations with respect to the substrate. The atomic force microscope (AFM) surface morphologies showed a smooth and crack-free surface with the average grain size of 55 nm and the root-mean-square (RMS) of 4.53 nm for BST films. Capacitance-voltage curves are measured. From the capacitance, a dielectric constant of 762, tunabilty of 82.81% and loss tangent of 0.032 are obtained. The current-voltage curve shows that the leakage current is 2.41 × 10^sup -7^ A/cm^sup 2^ under an applied voltage of 2 V.[PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1007/s10854-007-9150-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30949526</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2419865771</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-c9aa2d4b534ba4749eafdfcf8c47fec848c4c24ef2655daa15d93564766035c03</originalsourceid><addsrcrecordid>eNpdUE1LAzEUDKJgrf4Ab4ugt23zudkctVgVij1YwVt4zSY0Zbtbk11Qf70pWxA8zfCYmffeIHRN8IRgLKeR4FLwPNFcEYFzeYJGREiW85J-nKIRVkLmXFB6ji5i3GKMC87KEVrNYR28gc63TQZNlZkNBDCdDf5nGLYus3vfwZeHOnsAPCneAp7wlV-y6QJeE2Qbm_Rt7EJvuj7YeInOHNTRXh1xjN7nj6vZc75YPr3M7he5oQXrcqMAaMXXgvE1cMmVBVc540rDpbOm5IkYyq2jhRAVABGVYqLgsigwEwazMbobcveh_ext7PTOR2PrGhrb9lEzrLgSadcY3fwTbts-NOk2XZak4EpSlkRkEJn0SwzW6X3wOwjfmmB9KFkPJesDPZSsZfLcHoMhGqhdgMb4-GcsFaGcUvYLsoR7tg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>881649723</pqid></control><display><type>article</type><title>Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures</title><source>SpringerLink Journals - AutoHoldings</source><creator>QIN, W. F ; XIONG, J ; ZHU, J ; TANG, J. L ; JIE, W. J ; WEI, X. H ; ZHANG, Y ; LI, Y. R</creator><creatorcontrib>QIN, W. F ; XIONG, J ; ZHU, J ; TANG, J. L ; JIE, W. J ; WEI, X. H ; ZHANG, Y ; LI, Y. R</creatorcontrib><description>Issue Title: Special Section: Organic Electronics; Guest Editor: Amlan J. Pal Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The [theta]-2[theta] scans showed single crystalline BST and LNO layers with a (100) orientations perpendicular to the substrate plane. Phi scans () on the (220) plane of BST layer indicated that the films have two in-plane orientations with respect to the substrate. The atomic force microscope (AFM) surface morphologies showed a smooth and crack-free surface with the average grain size of 55 nm and the root-mean-square (RMS) of 4.53 nm for BST films. Capacitance-voltage curves are measured. From the capacitance, a dielectric constant of 762, tunabilty of 82.81% and loss tangent of 0.032 are obtained. The current-voltage curve shows that the leakage current is 2.41 × 10^sup -7^ A/cm^sup 2^ under an applied voltage of 2 V.[PUBLICATION ABSTRACT]</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-007-9150-7</identifier><language>eng</language><publisher>Norwell, MA: Springer</publisher><subject>Alloys ; Applied sciences ; Compound structure devices ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Grain size ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Microelectronic fabrication (materials and surfaces technology) ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of materials science. Materials in electronics, 2007-09, Vol.18 (9), p.973-976</ispartof><rights>2007 INIST-CNRS</rights><rights>Springer Science+Business Media, LLC 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-c9aa2d4b534ba4749eafdfcf8c47fec848c4c24ef2655daa15d93564766035c03</citedby><cites>FETCH-LOGICAL-c263t-c9aa2d4b534ba4749eafdfcf8c47fec848c4c24ef2655daa15d93564766035c03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18912422$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>QIN, W. F</creatorcontrib><creatorcontrib>XIONG, J</creatorcontrib><creatorcontrib>ZHU, J</creatorcontrib><creatorcontrib>TANG, J. L</creatorcontrib><creatorcontrib>JIE, W. J</creatorcontrib><creatorcontrib>WEI, X. H</creatorcontrib><creatorcontrib>ZHANG, Y</creatorcontrib><creatorcontrib>LI, Y. R</creatorcontrib><title>Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures</title><title>Journal of materials science. Materials in electronics</title><description>Issue Title: Special Section: Organic Electronics; Guest Editor: Amlan J. Pal Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The [theta]-2[theta] scans showed single crystalline BST and LNO layers with a (100) orientations perpendicular to the substrate plane. Phi scans () on the (220) plane of BST layer indicated that the films have two in-plane orientations with respect to the substrate. The atomic force microscope (AFM) surface morphologies showed a smooth and crack-free surface with the average grain size of 55 nm and the root-mean-square (RMS) of 4.53 nm for BST films. Capacitance-voltage curves are measured. From the capacitance, a dielectric constant of 762, tunabilty of 82.81% and loss tangent of 0.032 are obtained. The current-voltage curve shows that the leakage current is 2.41 × 10^sup -7^ A/cm^sup 2^ under an applied voltage of 2 V.[PUBLICATION ABSTRACT]</description><subject>Alloys</subject><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Grain size</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdUE1LAzEUDKJgrf4Ab4ugt23zudkctVgVij1YwVt4zSY0Zbtbk11Qf70pWxA8zfCYmffeIHRN8IRgLKeR4FLwPNFcEYFzeYJGREiW85J-nKIRVkLmXFB6ji5i3GKMC87KEVrNYR28gc63TQZNlZkNBDCdDf5nGLYus3vfwZeHOnsAPCneAp7wlV-y6QJeE2Qbm_Rt7EJvuj7YeInOHNTRXh1xjN7nj6vZc75YPr3M7he5oQXrcqMAaMXXgvE1cMmVBVc540rDpbOm5IkYyq2jhRAVABGVYqLgsigwEwazMbobcveh_ext7PTOR2PrGhrb9lEzrLgSadcY3fwTbts-NOk2XZak4EpSlkRkEJn0SwzW6X3wOwjfmmB9KFkPJesDPZSsZfLcHoMhGqhdgMb4-GcsFaGcUvYLsoR7tg</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>QIN, W. F</creator><creator>XIONG, J</creator><creator>ZHU, J</creator><creator>TANG, J. L</creator><creator>JIE, W. J</creator><creator>WEI, X. H</creator><creator>ZHANG, Y</creator><creator>LI, Y. R</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20070901</creationdate><title>Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures</title><author>QIN, W. F ; XIONG, J ; ZHU, J ; TANG, J. L ; JIE, W. J ; WEI, X. H ; ZHANG, Y ; LI, Y. R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-c9aa2d4b534ba4749eafdfcf8c47fec848c4c24ef2655daa15d93564766035c03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Alloys</topic><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Grain size</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>QIN, W. F</creatorcontrib><creatorcontrib>XIONG, J</creatorcontrib><creatorcontrib>ZHU, J</creatorcontrib><creatorcontrib>TANG, J. L</creatorcontrib><creatorcontrib>JIE, W. J</creatorcontrib><creatorcontrib>WEI, X. H</creatorcontrib><creatorcontrib>ZHANG, Y</creatorcontrib><creatorcontrib>LI, Y. R</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>QIN, W. F</au><au>XIONG, J</au><au>ZHU, J</au><au>TANG, J. L</au><au>JIE, W. J</au><au>WEI, X. H</au><au>ZHANG, Y</au><au>LI, Y. R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2007-09-01</date><risdate>2007</risdate><volume>18</volume><issue>9</issue><spage>973</spage><epage>976</epage><pages>973-976</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Issue Title: Special Section: Organic Electronics; Guest Editor: Amlan J. Pal Epitaxial Ba0.6Sr0.4TiO3 (BST)/LaNiO3 (LNO) heterostructures were fabricated on LAO (100) substrates using pulsed laser deposition (PLD). Their structural properties were investigated by X-ray diffraction (XRD). The [theta]-2[theta] scans showed single crystalline BST and LNO layers with a (100) orientations perpendicular to the substrate plane. Phi scans () on the (220) plane of BST layer indicated that the films have two in-plane orientations with respect to the substrate. The atomic force microscope (AFM) surface morphologies showed a smooth and crack-free surface with the average grain size of 55 nm and the root-mean-square (RMS) of 4.53 nm for BST films. Capacitance-voltage curves are measured. From the capacitance, a dielectric constant of 762, tunabilty of 82.81% and loss tangent of 0.032 are obtained. The current-voltage curve shows that the leakage current is 2.41 × 10^sup -7^ A/cm^sup 2^ under an applied voltage of 2 V.[PUBLICATION ABSTRACT]</abstract><cop>Norwell, MA</cop><pub>Springer</pub><doi>10.1007/s10854-007-9150-7</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2007-09, Vol.18 (9), p.973-976 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_30949526 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Alloys Applied sciences Compound structure devices Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Grain size Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Fabrication and characterization of epitaxial Ba0.6Sr0.4TiO3/LaNiO3 heterostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T07%3A47%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20and%20characterization%20of%20epitaxial%20Ba0.6Sr0.4TiO3/LaNiO3%20heterostructures&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=QIN,%20W.%20F&rft.date=2007-09-01&rft.volume=18&rft.issue=9&rft.spage=973&rft.epage=976&rft.pages=973-976&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-007-9150-7&rft_dat=%3Cproquest_cross%3E2419865771%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=881649723&rft_id=info:pmid/&rfr_iscdi=true |