Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems

Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto‐photoresponse. It enriches the application scenarios and shows potential to construct in‐sensor vision systems for artificial int...

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Veröffentlicht in:Advanced materials (Weinheim) 2024-11, Vol.36 (47), p.e2403624-n/a
Hauptverfasser: Zhu, Wenxuan, Sun, Jiacheng, Wang, Yuyan, Li, Yuankun, Bai, Hua, Wang, Qian, Han, Lei, Zhang, Qingtian, Wu, Huaqiang, Song, Cheng, Pan, Feng
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container_issue 47
container_start_page e2403624
container_title Advanced materials (Weinheim)
container_volume 36
creator Zhu, Wenxuan
Sun, Jiacheng
Wang, Yuyan
Li, Yuankun
Bai, Hua
Wang, Qian
Han, Lei
Zhang, Qingtian
Wu, Huaqiang
Song, Cheng
Pan, Feng
description Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto‐photoresponse. It enriches the application scenarios and shows potential to construct in‐sensor vision systems for artificial intelligence with gate‐free architecture. However, achieving a simultaneous existence of room‐temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room‐temperature magneto‐photoresponse is accomplished in all‐2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room‐temperature magnetism and photoelectric properties is realized by introducing the unique magneto‐band structure effect from 2D interface, resulting in magneto‐tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto‐photoresponse, traditional gate‐controlled phototransistors are replaced and a prototype in‐sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low‐contrast environments is established. These findings pave a way for achieving high‐temperature magneto‐photoresponse, thereby guiding the construction of robust in‐sensor vision systems toward high performance and broad applications. In 2D optoelectronic devices with the electrodes of 2D ferromagnet Fe3GaTe2 and channel of WSe2, the photoresponse is effectively controlled by magnetic fields at room temperature. This room‐temperature magneto‐photoresponse, achieved by the 2D magneto‐band structure, lays the groundwork for multidimensional responsive optoelectronic devices. It holds promise for the development of robust in‐sensor machine vision systems with gate‐free architectures.
doi_str_mv 10.1002/adma.202403624
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source Wiley Online Library Journals Frontfile Complete
subjects 2D magnetic materials
2D optoelectronic devices
Artificial intelligence
Charge transfer
Devices
Ferromagnetism
in‐sensor vision systems
Magnetic fields
Magnetic properties
Magnetism
magneto‐band structure effect
magneto‐photoresponse
Optoelectronic devices
Photoelectric effect
Photoelectricity
Phototransistors
Robustness
Semiconductors
Sensors
Vision systems
title Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems
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