Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems
Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto‐photoresponse. It enriches the application scenarios and shows potential to construct in‐sensor vision systems for artificial int...
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description | Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto‐photoresponse. It enriches the application scenarios and shows potential to construct in‐sensor vision systems for artificial intelligence with gate‐free architecture. However, achieving a simultaneous existence of room‐temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room‐temperature magneto‐photoresponse is accomplished in all‐2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room‐temperature magnetism and photoelectric properties is realized by introducing the unique magneto‐band structure effect from 2D interface, resulting in magneto‐tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto‐photoresponse, traditional gate‐controlled phototransistors are replaced and a prototype in‐sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low‐contrast environments is established. These findings pave a way for achieving high‐temperature magneto‐photoresponse, thereby guiding the construction of robust in‐sensor vision systems toward high performance and broad applications.
In 2D optoelectronic devices with the electrodes of 2D ferromagnet Fe3GaTe2 and channel of WSe2, the photoresponse is effectively controlled by magnetic fields at room temperature. This room‐temperature magneto‐photoresponse, achieved by the 2D magneto‐band structure, lays the groundwork for multidimensional responsive optoelectronic devices. It holds promise for the development of robust in‐sensor machine vision systems with gate‐free architectures. |
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In 2D optoelectronic devices with the electrodes of 2D ferromagnet Fe3GaTe2 and channel of WSe2, the photoresponse is effectively controlled by magnetic fields at room temperature. This room‐temperature magneto‐photoresponse, achieved by the 2D magneto‐band structure, lays the groundwork for multidimensional responsive optoelectronic devices. It holds promise for the development of robust in‐sensor machine vision systems with gate‐free architectures.</description><identifier>ISSN: 0935-9648</identifier><identifier>ISSN: 1521-4095</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.202403624</identifier><identifier>PMID: 39129355</identifier><language>eng</language><publisher>Germany: Wiley Subscription Services, Inc</publisher><subject>2D magnetic materials ; 2D optoelectronic devices ; Artificial intelligence ; Charge transfer ; Devices ; Ferromagnetism ; in‐sensor vision systems ; Magnetic fields ; Magnetic properties ; Magnetism ; magneto‐band structure effect ; magneto‐photoresponse ; Optoelectronic devices ; Photoelectric effect ; Photoelectricity ; Phototransistors ; Robustness ; Semiconductors ; Sensors ; Vision systems</subject><ispartof>Advanced materials (Weinheim), 2024-11, Vol.36 (47), p.e2403624-n/a</ispartof><rights>2024 Wiley‐VCH GmbH</rights><rights>2024 Wiley‐VCH GmbH.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2584-c7dcf15218ae98daab497cc1a006132927778bc76142733af96ed91aa7d7973e3</cites><orcidid>0000-0002-6369-7103 ; 0000-0002-7651-9031</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.202403624$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.202403624$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39129355$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhu, Wenxuan</creatorcontrib><creatorcontrib>Sun, Jiacheng</creatorcontrib><creatorcontrib>Wang, Yuyan</creatorcontrib><creatorcontrib>Li, Yuankun</creatorcontrib><creatorcontrib>Bai, Hua</creatorcontrib><creatorcontrib>Wang, Qian</creatorcontrib><creatorcontrib>Han, Lei</creatorcontrib><creatorcontrib>Zhang, Qingtian</creatorcontrib><creatorcontrib>Wu, Huaqiang</creatorcontrib><creatorcontrib>Song, Cheng</creatorcontrib><creatorcontrib>Pan, Feng</creatorcontrib><title>Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems</title><title>Advanced materials (Weinheim)</title><addtitle>Adv Mater</addtitle><description>Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto‐photoresponse. It enriches the application scenarios and shows potential to construct in‐sensor vision systems for artificial intelligence with gate‐free architecture. However, achieving a simultaneous existence of room‐temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room‐temperature magneto‐photoresponse is accomplished in all‐2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room‐temperature magnetism and photoelectric properties is realized by introducing the unique magneto‐band structure effect from 2D interface, resulting in magneto‐tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto‐photoresponse, traditional gate‐controlled phototransistors are replaced and a prototype in‐sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low‐contrast environments is established. These findings pave a way for achieving high‐temperature magneto‐photoresponse, thereby guiding the construction of robust in‐sensor vision systems toward high performance and broad applications.
In 2D optoelectronic devices with the electrodes of 2D ferromagnet Fe3GaTe2 and channel of WSe2, the photoresponse is effectively controlled by magnetic fields at room temperature. This room‐temperature magneto‐photoresponse, achieved by the 2D magneto‐band structure, lays the groundwork for multidimensional responsive optoelectronic devices. It holds promise for the development of robust in‐sensor machine vision systems with gate‐free architectures.</description><subject>2D magnetic materials</subject><subject>2D optoelectronic devices</subject><subject>Artificial intelligence</subject><subject>Charge transfer</subject><subject>Devices</subject><subject>Ferromagnetism</subject><subject>in‐sensor vision systems</subject><subject>Magnetic fields</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>magneto‐band structure effect</subject><subject>magneto‐photoresponse</subject><subject>Optoelectronic devices</subject><subject>Photoelectric effect</subject><subject>Photoelectricity</subject><subject>Phototransistors</subject><subject>Robustness</subject><subject>Semiconductors</subject><subject>Sensors</subject><subject>Vision systems</subject><issn>0935-9648</issn><issn>1521-4095</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqFkcFO3DAQhq2Kqiy01x5RJC69ZDu2kzg-rlgKK4GourRXy-tMSlBiBztptTcegWfkSfBqF5C4cJrRzDe_PfMT8pXClAKw77rq9JQBy4AXLPtAJjRnNM1A5ntkApLnqSyycp8chHALALKA4hPZ55Ky2MsnpP3lXPd4_3CNXY9eD6PH5FL_tTi4WP154wbnMfTOBkwam8zaNpbZPLnqB4ctmsE725hkjv8agyGpnU8WNiJLtCHmf5rQOJss12HALnwmH2vdBvyyi4fk94_T65Pz9OLqbHEyu0gNy8ssNaIy9WaPUqMsK61XmRTGUA1QUM4kE0KUKyMKmjHBua5lgZWkWotKSMGRH5JvW93eu7sRw6C6JhhsW23RjUFxkAwozTMZ0eM36K0bvY2_Uzy-ldMSCh6p6ZYy3oXgsVa9bzrt14qC2vigNj6oFx_iwNFOdlx1WL3gz4ePgNwC_5sW1-_Iqdn8cvYq_gQUz5gS</recordid><startdate>20241101</startdate><enddate>20241101</enddate><creator>Zhu, Wenxuan</creator><creator>Sun, Jiacheng</creator><creator>Wang, Yuyan</creator><creator>Li, Yuankun</creator><creator>Bai, Hua</creator><creator>Wang, Qian</creator><creator>Han, Lei</creator><creator>Zhang, Qingtian</creator><creator>Wu, Huaqiang</creator><creator>Song, Cheng</creator><creator>Pan, Feng</creator><general>Wiley Subscription Services, Inc</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-6369-7103</orcidid><orcidid>https://orcid.org/0000-0002-7651-9031</orcidid></search><sort><creationdate>20241101</creationdate><title>Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems</title><author>Zhu, Wenxuan ; Sun, Jiacheng ; Wang, Yuyan ; Li, Yuankun ; Bai, Hua ; Wang, Qian ; Han, Lei ; Zhang, Qingtian ; Wu, Huaqiang ; Song, Cheng ; Pan, Feng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2584-c7dcf15218ae98daab497cc1a006132927778bc76142733af96ed91aa7d7973e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>2D magnetic materials</topic><topic>2D optoelectronic devices</topic><topic>Artificial intelligence</topic><topic>Charge transfer</topic><topic>Devices</topic><topic>Ferromagnetism</topic><topic>in‐sensor vision systems</topic><topic>Magnetic fields</topic><topic>Magnetic properties</topic><topic>Magnetism</topic><topic>magneto‐band structure effect</topic><topic>magneto‐photoresponse</topic><topic>Optoelectronic devices</topic><topic>Photoelectric effect</topic><topic>Photoelectricity</topic><topic>Phototransistors</topic><topic>Robustness</topic><topic>Semiconductors</topic><topic>Sensors</topic><topic>Vision systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Wenxuan</creatorcontrib><creatorcontrib>Sun, Jiacheng</creatorcontrib><creatorcontrib>Wang, Yuyan</creatorcontrib><creatorcontrib>Li, Yuankun</creatorcontrib><creatorcontrib>Bai, Hua</creatorcontrib><creatorcontrib>Wang, Qian</creatorcontrib><creatorcontrib>Han, Lei</creatorcontrib><creatorcontrib>Zhang, Qingtian</creatorcontrib><creatorcontrib>Wu, Huaqiang</creatorcontrib><creatorcontrib>Song, Cheng</creatorcontrib><creatorcontrib>Pan, Feng</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Wenxuan</au><au>Sun, Jiacheng</au><au>Wang, Yuyan</au><au>Li, Yuankun</au><au>Bai, Hua</au><au>Wang, Qian</au><au>Han, Lei</au><au>Zhang, Qingtian</au><au>Wu, Huaqiang</au><au>Song, Cheng</au><au>Pan, Feng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv Mater</addtitle><date>2024-11-01</date><risdate>2024</risdate><volume>36</volume><issue>47</issue><spage>e2403624</spage><epage>n/a</epage><pages>e2403624-n/a</pages><issn>0935-9648</issn><issn>1521-4095</issn><eissn>1521-4095</eissn><abstract>Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto‐photoresponse. It enriches the application scenarios and shows potential to construct in‐sensor vision systems for artificial intelligence with gate‐free architecture. However, achieving a simultaneous existence of room‐temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room‐temperature magneto‐photoresponse is accomplished in all‐2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room‐temperature magnetism and photoelectric properties is realized by introducing the unique magneto‐band structure effect from 2D interface, resulting in magneto‐tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto‐photoresponse, traditional gate‐controlled phototransistors are replaced and a prototype in‐sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low‐contrast environments is established. These findings pave a way for achieving high‐temperature magneto‐photoresponse, thereby guiding the construction of robust in‐sensor vision systems toward high performance and broad applications.
In 2D optoelectronic devices with the electrodes of 2D ferromagnet Fe3GaTe2 and channel of WSe2, the photoresponse is effectively controlled by magnetic fields at room temperature. This room‐temperature magneto‐photoresponse, achieved by the 2D magneto‐band structure, lays the groundwork for multidimensional responsive optoelectronic devices. It holds promise for the development of robust in‐sensor machine vision systems with gate‐free architectures.</abstract><cop>Germany</cop><pub>Wiley Subscription Services, Inc</pub><pmid>39129355</pmid><doi>10.1002/adma.202403624</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-6369-7103</orcidid><orcidid>https://orcid.org/0000-0002-7651-9031</orcidid></addata></record> |
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subjects | 2D magnetic materials 2D optoelectronic devices Artificial intelligence Charge transfer Devices Ferromagnetism in‐sensor vision systems Magnetic fields Magnetic properties Magnetism magneto‐band structure effect magneto‐photoresponse Optoelectronic devices Photoelectric effect Photoelectricity Phototransistors Robustness Semiconductors Sensors Vision systems |
title | Room‐Temperature Magneto‐Photoresponse in All‐2D Optoelectronic Devices for In‐Sensor Vision Systems |
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