Electron- and hole-related electrical activity of InAs/GaAs quantum dots

The electron- and hole-related electrical activity of the InAs/GaAs quantum dot system has been demonstrated with a use of the high-resolution Laplace and conventional DLTS methods combined with below GaAs bandgap illumination. Without the illumination, the DLTS signal refers to the emission process...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2007-12, Vol.401, p.580-583
Hauptverfasser:	Kruszewski, P., Dobaczewski, L., Markevich, V.P., Mitchell, C., Missous, M., Peaker, A.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Experiment Laplace DLTS Nanostructures Quantum dots Self-assembled InAs/GaAs QD
Online-Zugang:	Volltext
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