Activation of carbon disulfide by a hypersilyl germylene

In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ). Interestingly, the addition of NHC to 2 allows the release of NHC·CS 2 with concomitant regener...

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Veröffentlicht in:Dalton transactions : an international journal of inorganic chemistry 2024-07, Vol.53 (26), p.1814-1818
Hauptverfasser: Ajithkumar, V. S, Khilari, Nripen, Ghanwat, Pratiksha B, Venugopal, Geethu, Koley, Debasis, Sen, Sakya S
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container_issue 26
container_start_page 1814
container_title Dalton transactions : an international journal of inorganic chemistry
container_volume 53
creator Ajithkumar, V. S
Khilari, Nripen
Ghanwat, Pratiksha B
Venugopal, Geethu
Koley, Debasis
Sen, Sakya S
description In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ). Interestingly, the addition of NHC to 2 allows the release of NHC·CS 2 with concomitant regeneration of 1 . Addition of another equivalent of 1 or an analogous hypersilyl silylene, [PhC(N t Bu) 2 Si-Si(SiMe 3 ) 3 ], to 2 led to the formation of compounds with a Ge&z.dbd;S ( 3 ) or a Si&z.dbd;S ( 4 ) bond. In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ).
doi_str_mv 10.1039/d4dt01573h
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fullrecord <record><control><sourceid>proquest_rsc_p</sourceid><recordid>TN_cdi_proquest_miscellaneous_3066790601</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3074298372</sourcerecordid><originalsourceid>FETCH-LOGICAL-c296t-c51211baba2d6f194ca8f5f10da1eeb9f40dfb0aa944f266d3e006ce04e574103</originalsourceid><addsrcrecordid>eNpd0UtLw0AQB_BFFFurF-9KwIsI0dlHNtljadUKBS_1HDb7sCl51N1EyLd3tbWCpx3YH8PMfxC6xHCPgYoHzXQHOEnp-giNMUvTWBDKjg814SN05v0GgBBIyCka0SxLRArZGGVT1ZWfsivbJmptpKQrQqVL31e21CYqhkhG62FrnC-roYrejauHyjTmHJ1YWXlzsX8n6O3pcTVbxMvX55fZdBkrIngXqwQTjAtZSKK5xYIpmdnEYtASG1MIy0DbAqQUjFnCuaYGgCsDzCQpC-tN0O2u79a1H73xXV6XXpmqko1pe59T4DwVwAEHevOPbtreNWG6oFJGREZTEtTdTinXeu-MzbeurKUbcgz5d575nM1XP3kuAr7et-yL2ugD_Q0wgKsdcF4dfv8OQr8Ai_V5GQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3074298372</pqid></control><display><type>article</type><title>Activation of carbon disulfide by a hypersilyl germylene</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Ajithkumar, V. S ; Khilari, Nripen ; Ghanwat, Pratiksha B ; Venugopal, Geethu ; Koley, Debasis ; Sen, Sakya S</creator><creatorcontrib>Ajithkumar, V. S ; Khilari, Nripen ; Ghanwat, Pratiksha B ; Venugopal, Geethu ; Koley, Debasis ; Sen, Sakya S</creatorcontrib><description>In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&amp;z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ). Interestingly, the addition of NHC to 2 allows the release of NHC·CS 2 with concomitant regeneration of 1 . Addition of another equivalent of 1 or an analogous hypersilyl silylene, [PhC(N t Bu) 2 Si-Si(SiMe 3 ) 3 ], to 2 led to the formation of compounds with a Ge&amp;z.dbd;S ( 3 ) or a Si&amp;z.dbd;S ( 4 ) bond. In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&amp;z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ).</description><identifier>ISSN: 1477-9226</identifier><identifier>ISSN: 1477-9234</identifier><identifier>EISSN: 1477-9234</identifier><identifier>DOI: 10.1039/d4dt01573h</identifier><identifier>PMID: 38859708</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Carbon disulfide ; Germanium ; Silicon</subject><ispartof>Dalton transactions : an international journal of inorganic chemistry, 2024-07, Vol.53 (26), p.1814-1818</ispartof><rights>Copyright Royal Society of Chemistry 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c296t-c51211baba2d6f194ca8f5f10da1eeb9f40dfb0aa944f266d3e006ce04e574103</cites><orcidid>0000-0002-4955-5408 ; 0000-0002-7912-3972 ; 0009-0009-9686-7605</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38859708$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Ajithkumar, V. S</creatorcontrib><creatorcontrib>Khilari, Nripen</creatorcontrib><creatorcontrib>Ghanwat, Pratiksha B</creatorcontrib><creatorcontrib>Venugopal, Geethu</creatorcontrib><creatorcontrib>Koley, Debasis</creatorcontrib><creatorcontrib>Sen, Sakya S</creatorcontrib><title>Activation of carbon disulfide by a hypersilyl germylene</title><title>Dalton transactions : an international journal of inorganic chemistry</title><addtitle>Dalton Trans</addtitle><description>In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&amp;z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ). Interestingly, the addition of NHC to 2 allows the release of NHC·CS 2 with concomitant regeneration of 1 . Addition of another equivalent of 1 or an analogous hypersilyl silylene, [PhC(N t Bu) 2 Si-Si(SiMe 3 ) 3 ], to 2 led to the formation of compounds with a Ge&amp;z.dbd;S ( 3 ) or a Si&amp;z.dbd;S ( 4 ) bond. In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&amp;z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ).</description><subject>Carbon disulfide</subject><subject>Germanium</subject><subject>Silicon</subject><issn>1477-9226</issn><issn>1477-9234</issn><issn>1477-9234</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpd0UtLw0AQB_BFFFurF-9KwIsI0dlHNtljadUKBS_1HDb7sCl51N1EyLd3tbWCpx3YH8PMfxC6xHCPgYoHzXQHOEnp-giNMUvTWBDKjg814SN05v0GgBBIyCka0SxLRArZGGVT1ZWfsivbJmptpKQrQqVL31e21CYqhkhG62FrnC-roYrejauHyjTmHJ1YWXlzsX8n6O3pcTVbxMvX55fZdBkrIngXqwQTjAtZSKK5xYIpmdnEYtASG1MIy0DbAqQUjFnCuaYGgCsDzCQpC-tN0O2u79a1H73xXV6XXpmqko1pe59T4DwVwAEHevOPbtreNWG6oFJGREZTEtTdTinXeu-MzbeurKUbcgz5d575nM1XP3kuAr7et-yL2ugD_Q0wgKsdcF4dfv8OQr8Ai_V5GQ</recordid><startdate>20240702</startdate><enddate>20240702</enddate><creator>Ajithkumar, V. S</creator><creator>Khilari, Nripen</creator><creator>Ghanwat, Pratiksha B</creator><creator>Venugopal, Geethu</creator><creator>Koley, Debasis</creator><creator>Sen, Sakya S</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-4955-5408</orcidid><orcidid>https://orcid.org/0000-0002-7912-3972</orcidid><orcidid>https://orcid.org/0009-0009-9686-7605</orcidid></search><sort><creationdate>20240702</creationdate><title>Activation of carbon disulfide by a hypersilyl germylene</title><author>Ajithkumar, V. S ; Khilari, Nripen ; Ghanwat, Pratiksha B ; Venugopal, Geethu ; Koley, Debasis ; Sen, Sakya S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c296t-c51211baba2d6f194ca8f5f10da1eeb9f40dfb0aa944f266d3e006ce04e574103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Carbon disulfide</topic><topic>Germanium</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ajithkumar, V. S</creatorcontrib><creatorcontrib>Khilari, Nripen</creatorcontrib><creatorcontrib>Ghanwat, Pratiksha B</creatorcontrib><creatorcontrib>Venugopal, Geethu</creatorcontrib><creatorcontrib>Koley, Debasis</creatorcontrib><creatorcontrib>Sen, Sakya S</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Dalton transactions : an international journal of inorganic chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ajithkumar, V. S</au><au>Khilari, Nripen</au><au>Ghanwat, Pratiksha B</au><au>Venugopal, Geethu</au><au>Koley, Debasis</au><au>Sen, Sakya S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Activation of carbon disulfide by a hypersilyl germylene</atitle><jtitle>Dalton transactions : an international journal of inorganic chemistry</jtitle><addtitle>Dalton Trans</addtitle><date>2024-07-02</date><risdate>2024</risdate><volume>53</volume><issue>26</issue><spage>1814</spage><epage>1818</epage><pages>1814-1818</pages><issn>1477-9226</issn><issn>1477-9234</issn><eissn>1477-9234</eissn><abstract>In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&amp;z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ). Interestingly, the addition of NHC to 2 allows the release of NHC·CS 2 with concomitant regeneration of 1 . Addition of another equivalent of 1 or an analogous hypersilyl silylene, [PhC(N t Bu) 2 Si-Si(SiMe 3 ) 3 ], to 2 led to the formation of compounds with a Ge&amp;z.dbd;S ( 3 ) or a Si&amp;z.dbd;S ( 4 ) bond. In this work, the insertion of CS 2 into the Ge-Si bond of PhC(N t Bu) 2 Ge-Si(SiMe 3 ) 3 ( 1 ) has been investigated, resulting in the formation of PhC(N t Bu) 2 Ge-C(&amp;z.dbd;S)-S-Si(SiMe 3 ) 3 ( 2 ).</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>38859708</pmid><doi>10.1039/d4dt01573h</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-4955-5408</orcidid><orcidid>https://orcid.org/0000-0002-7912-3972</orcidid><orcidid>https://orcid.org/0009-0009-9686-7605</orcidid></addata></record>
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1477-9234
1477-9234
language eng
recordid cdi_proquest_miscellaneous_3066790601
source Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
subjects Carbon disulfide
Germanium
Silicon
title Activation of carbon disulfide by a hypersilyl germylene
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T16%3A28%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_rsc_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Activation%20of%20carbon%20disulfide%20by%20a%20hypersilyl%20germylene&rft.jtitle=Dalton%20transactions%20:%20an%20international%20journal%20of%20inorganic%20chemistry&rft.au=Ajithkumar,%20V.%20S&rft.date=2024-07-02&rft.volume=53&rft.issue=26&rft.spage=1814&rft.epage=1818&rft.pages=1814-1818&rft.issn=1477-9226&rft.eissn=1477-9234&rft_id=info:doi/10.1039/d4dt01573h&rft_dat=%3Cproquest_rsc_p%3E3074298372%3C/proquest_rsc_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3074298372&rft_id=info:pmid/38859708&rfr_iscdi=true