Photon–carrier–spin coupling in a one-dimensional Ni(II)-doped ZnTe nanostructure

The transition metal ions doping in II-VI semiconductor can produce exciton magnetic polaron (EMP) and localized EMP, in which contain longitudinal optical (LO) phonon coupling will be discussed in this paper. Transition metal ion doping in II-VI semiconductor for dilute magnetic semiconductor (DMS) show emission by magnetic polarons together with hot carrier effect that need to be understand by its optical properties. The high excitation power responsible for hot carrier effect that suppressed the charge trapping effect for low exciton binding energy (8.12 meV) semiconductor even at room temperature. The large polaron radius exhibits strong interaction between carrier and magnetic polaron results anharmonicty effect in which side-band energy overtone to LO phonon. The photon-like polariton show the polarized spin interaction with LO that show strong spin-phonon polariton at room temperature. The temperature-dependent photoluminescence spectra of Ni-doped ZnTe show free exciton (FX), FX interact with 2LO phonon-spin interaction corresponding to 3T1(3F) → 1T1(1G) and EMP peaks with ferromagnetically coupled Ni ions at 3T1(3F) → 1E(1G). In addition, other d-d transition of single Ni ions (600-900 nm) appears at low energy side. Room temperature energy shift of 14-38 meV due to localized states with density of states tails extending far into bandgap related spin induced localization at valance band. These results show spin-spin magnetic coupling and spin-phonon interaction at room temperature that open a new horizon of optically controlled dilute magnetic semiconductor applications more realistic.