Programmable Retention Characteristics in MoS2‑Based Atomristors for Neuromorphic and Reservoir Computing Systems

In this study, we investigate the coexistence of short- and long-term memory effects owing to the programmable retention characteristics of a two-dimensional Au/MoS2/Au atomristor device and determine the impact of these effects on synaptic properties. This device is constructed using bilayer MoS2 i...

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Veröffentlicht in:	ACS nano 2024-06, Vol.18 (22), p.14327-14338
Hauptverfasser:	Lee, Yoonseok, Huang, Yifu, Chang, Yao-Feng, Yang, Sung Jin, Ignacio, Nicholas D., Kutagulla, Shanmukh, Mohan, Sivasakthya, Kim, Sunghun, Lee, Jungwoo, Akinwande, Deji, Kim, Sungjun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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