Oxygen Vacancies Trigger Rapid Charge Transport Channels at the Engineered Interface of S-scheme Heterojunction for Boosting Photocatalytic Performance

Although oxygen vacancies (Ovs) have been intensively studied in single semiconductor photocatalysts, exploration of intrinsic mechanisms and in-depth understanding of Ovs in S-scheme heterojunction photocatalysts are still limited. Herein, a novel S-scheme photocatalyst made from WO3-Ov/In2S3 with...

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Veröffentlicht in:Angewandte Chemie International Edition 2024-07, Vol.63 (31), p.e202405756
Hauptverfasser: Zu, Di, Ying, Yiran, Wei, Qi, Xiong, Pei, Ahmed, Mortuza Saleque, Lin, Zezhou, Li, Molly Meng-Jung, Li, Mingjie, Xu, Zhihang, Chen, Gao, Bai, Liqi, She, Sixuan, Tsang, Yuen Hong, Huang, Haitao
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Sprache:eng
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