Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In x Ga1–x )2O3 Solar-Blind Photodetectors
Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga2O3 has an essential effect on the tunable per...
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| Veröffentlicht in: | The journal of physical chemistry letters 2024-05, Vol.15 (18), p.4906-4912 |
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| container_title | The journal of physical chemistry letters |
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| creator | Xi, Zhaoying Liu, Zeng Yan, Sihan Liu, Maosheng Zhang, Jia-Han Guo, Xin Li, Lei Ma, Wanyu Li, Shan Yang, Lili Jiang, Mingming Tang, Weihua |
| description | Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga2O3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (In x Ga1–x )2O3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70–4.99 eV is achieved by varying the In-doping content. Alloy-based metal–semiconductor–metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga2O3 photodetectors, with a photo-to-dark current ratio as high as 106, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light. |
| doi_str_mv | 10.1021/acs.jpclett.4c00812 |
| format | Article |
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Here, a novel method for the preparation of (In x Ga1–x )2O3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70–4.99 eV is achieved by varying the In-doping content. Alloy-based metal–semiconductor–metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga2O3 photodetectors, with a photo-to-dark current ratio as high as 106, and a better optical image-sensing capability. 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Phys. Chem. Lett</addtitle><date>2024-05-09</date><risdate>2024</risdate><volume>15</volume><issue>18</issue><spage>4906</spage><epage>4912</epage><pages>4906-4912</pages><issn>1948-7185</issn><eissn>1948-7185</eissn><abstract>Rising wide bandgap semiconductor gallium oxide (Ga2O3) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga2O3 has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (In x Ga1–x )2O3 alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70–4.99 eV is achieved by varying the In-doping content. Alloy-based metal–semiconductor–metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga2O3 photodetectors, with a photo-to-dark current ratio as high as 106, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.</abstract><pub>American Chemical Society</pub><doi>10.1021/acs.jpclett.4c00812</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-1784-582X</orcidid><orcidid>https://orcid.org/0000-0002-7319-9909</orcidid><orcidid>https://orcid.org/0000-0002-4119-5890</orcidid><orcidid>https://orcid.org/0000-0003-3215-7929</orcidid></addata></record> |
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| source | ACS Publications |
| subjects | Physical Insights into Light Interacting with Matter |
| title | Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In x Ga1–x )2O3 Solar-Blind Photodetectors |
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