The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Large areas of electrically active regions of in-homogeneities have been revealed by the electroless photo-etching (PEC) method in GaN layers grown by the hydride vapor phase epitaxy (HVPE) technique. Variations in the local etch rate have been correlated with the variations in the free-carrier conc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2007-09, Vol.307 (2), p.298-301
Hauptverfasser:	Lewandowska, R., Weyher, J.L., Kelly, J.J., Konczewicz, L., Lucznik, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Defects A1. Etching A3. Hydride vapor phase epitaxy Applied sciences B1. Nitrides Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Large areas of electrically active regions of in-homogeneities have been revealed by the electroless photo-etching (PEC) method in GaN layers grown by the hydride vapor phase epitaxy (HVPE) technique. Variations in the local etch rate have been correlated with the variations in the free-carrier concentrations as determined by micro-Raman spectroscopy. The etch rate decreased linearly with the log of the carrier concentration. The latter could change by more than two orders of magnitude on the same sample.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2007.07.019