Epitaxial growth of cobalt oxide by atomic layer deposition
Highly oriented thin films of cobalt oxide were made by the atomic layer deposition (ALD) technique, using Co(thd) 2 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on single-crystalline substrates of MgO(1 0 0), α-Al 2O 3(0 0 1), and SrTiO 3(1 0 0). Epitaxia...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2007-09, Vol.307 (2), p.457-465 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 465 |
|---|---|
| container_issue | 2 |
| container_start_page | 457 |
| container_title | Journal of crystal growth |
| container_volume | 307 |
| creator | Klepper, K.B. Nilsen, O. Fjellvåg, H. |
| description | Highly oriented thin films of cobalt oxide were made by the atomic layer deposition (ALD) technique, using Co(thd)
2 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on single-crystalline substrates of MgO(1
0
0), α-Al
2O
3(0
0
1), and SrTiO
3(1
0
0). Epitaxial growth has been established with the following orientations: (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]MgO, (1
1
1)[1
1
1]Co
3O
4∥(0
0
1)[0
0
1]α-Al
2O
3, and (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]SrTiO
3. The resulting texture was studied as function of deposition temperature in the range 138–283
°C for MgO(1
0
0) and 186–283
°C for the remaining substrates. The topography and morphology of the films were investigated by atomic force microscopy (AFM), and in selected cases scanning electron microscopy. The specific electronic resistivities of as-deposited films grown on the various substrates were measured to be from 0.8 to 85
Ωcm. |
| doi_str_mv | 10.1016/j.jcrysgro.2007.06.028 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30124636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024807006094</els_id><sourcerecordid>30124636</sourcerecordid><originalsourceid>FETCH-LOGICAL-c439t-fb13c21084b5ea452a1e2bd7cdedad6b6744aea924ef7830527da0192fe31b23</originalsourceid><addsrcrecordid>eNqFkD1PwzAQhi0EEqXwF1AW2BLOTuIkYgFV5UOqxNLdutgXcJTGxU6h_fekahEjy93yvO_pHsauOSQcuLxrk1b7XXj3LhEARQIyAVGesAkvizTOAcQpm4xTxCCy8pxdhNACjEkOE3Y_X9sBtxa7aCz4Hj4i10Ta1dgNkdtaQ1G9i3BwK6ujDnfkI0NrF-xgXX_JzhrsAl0d95Qtn-bL2Uu8eHt-nT0uYp2l1RA3NU-14FBmdU6Y5QI5idoU2pBBI2tZZBkSViKjpihTyEVhEHglGkp5LdIpuz3Urr373FAY1MoGTV2HPblNUClwkclUjqA8gNq7EDw1au3tCv1OcVB7VapVv6rUXpUCqUZVY_DmeAGDxq7x2Gsb_tIVFJIXe-7hwNH47Zclr4K21Gsy1pMelHH2v1M_RT-DUA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30124636</pqid></control><display><type>article</type><title>Epitaxial growth of cobalt oxide by atomic layer deposition</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Klepper, K.B. ; Nilsen, O. ; Fjellvåg, H.</creator><creatorcontrib>Klepper, K.B. ; Nilsen, O. ; Fjellvåg, H.</creatorcontrib><description>Highly oriented thin films of cobalt oxide were made by the atomic layer deposition (ALD) technique, using Co(thd)
2 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on single-crystalline substrates of MgO(1
0
0), α-Al
2O
3(0
0
1), and SrTiO
3(1
0
0). Epitaxial growth has been established with the following orientations: (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]MgO, (1
1
1)[1
1
1]Co
3O
4∥(0
0
1)[0
0
1]α-Al
2O
3, and (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]SrTiO
3. The resulting texture was studied as function of deposition temperature in the range 138–283
°C for MgO(1
0
0) and 186–283
°C for the remaining substrates. The topography and morphology of the films were investigated by atomic force microscopy (AFM), and in selected cases scanning electron microscopy. The specific electronic resistivities of as-deposited films grown on the various substrates were measured to be from 0.8 to 85
Ωcm.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2007.06.028</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Epitaxial growth ; A2. Atomic layer deposition (ALD) ; A3. Atomic layer chemical vapour deposition (ALCVD) ; A3. Atomic layer epitaxy (ALE) ; B1. Cobalt oxide ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2007-09, Vol.307 (2), p.457-465</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-fb13c21084b5ea452a1e2bd7cdedad6b6744aea924ef7830527da0192fe31b23</citedby><cites>FETCH-LOGICAL-c439t-fb13c21084b5ea452a1e2bd7cdedad6b6744aea924ef7830527da0192fe31b23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2007.06.028$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19076178$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Klepper, K.B.</creatorcontrib><creatorcontrib>Nilsen, O.</creatorcontrib><creatorcontrib>Fjellvåg, H.</creatorcontrib><title>Epitaxial growth of cobalt oxide by atomic layer deposition</title><title>Journal of crystal growth</title><description>Highly oriented thin films of cobalt oxide were made by the atomic layer deposition (ALD) technique, using Co(thd)
2 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on single-crystalline substrates of MgO(1
0
0), α-Al
2O
3(0
0
1), and SrTiO
3(1
0
0). Epitaxial growth has been established with the following orientations: (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]MgO, (1
1
1)[1
1
1]Co
3O
4∥(0
0
1)[0
0
1]α-Al
2O
3, and (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]SrTiO
3. The resulting texture was studied as function of deposition temperature in the range 138–283
°C for MgO(1
0
0) and 186–283
°C for the remaining substrates. The topography and morphology of the films were investigated by atomic force microscopy (AFM), and in selected cases scanning electron microscopy. The specific electronic resistivities of as-deposited films grown on the various substrates were measured to be from 0.8 to 85
Ωcm.</description><subject>A1. Epitaxial growth</subject><subject>A2. Atomic layer deposition (ALD)</subject><subject>A3. Atomic layer chemical vapour deposition (ALCVD)</subject><subject>A3. Atomic layer epitaxy (ALE)</subject><subject>B1. Cobalt oxide</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqXwF1AW2BLOTuIkYgFV5UOqxNLdutgXcJTGxU6h_fekahEjy93yvO_pHsauOSQcuLxrk1b7XXj3LhEARQIyAVGesAkvizTOAcQpm4xTxCCy8pxdhNACjEkOE3Y_X9sBtxa7aCz4Hj4i10Ta1dgNkdtaQ1G9i3BwK6ujDnfkI0NrF-xgXX_JzhrsAl0d95Qtn-bL2Uu8eHt-nT0uYp2l1RA3NU-14FBmdU6Y5QI5idoU2pBBI2tZZBkSViKjpihTyEVhEHglGkp5LdIpuz3Urr373FAY1MoGTV2HPblNUClwkclUjqA8gNq7EDw1au3tCv1OcVB7VapVv6rUXpUCqUZVY_DmeAGDxq7x2Gsb_tIVFJIXe-7hwNH47Zclr4K21Gsy1pMelHH2v1M_RT-DUA</recordid><startdate>20070915</startdate><enddate>20070915</enddate><creator>Klepper, K.B.</creator><creator>Nilsen, O.</creator><creator>Fjellvåg, H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20070915</creationdate><title>Epitaxial growth of cobalt oxide by atomic layer deposition</title><author>Klepper, K.B. ; Nilsen, O. ; Fjellvåg, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-fb13c21084b5ea452a1e2bd7cdedad6b6744aea924ef7830527da0192fe31b23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A1. Epitaxial growth</topic><topic>A2. Atomic layer deposition (ALD)</topic><topic>A3. Atomic layer chemical vapour deposition (ALCVD)</topic><topic>A3. Atomic layer epitaxy (ALE)</topic><topic>B1. Cobalt oxide</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klepper, K.B.</creatorcontrib><creatorcontrib>Nilsen, O.</creatorcontrib><creatorcontrib>Fjellvåg, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klepper, K.B.</au><au>Nilsen, O.</au><au>Fjellvåg, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of cobalt oxide by atomic layer deposition</atitle><jtitle>Journal of crystal growth</jtitle><date>2007-09-15</date><risdate>2007</risdate><volume>307</volume><issue>2</issue><spage>457</spage><epage>465</epage><pages>457-465</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Highly oriented thin films of cobalt oxide were made by the atomic layer deposition (ALD) technique, using Co(thd)
2 (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on single-crystalline substrates of MgO(1
0
0), α-Al
2O
3(0
0
1), and SrTiO
3(1
0
0). Epitaxial growth has been established with the following orientations: (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]MgO, (1
1
1)[1
1
1]Co
3O
4∥(0
0
1)[0
0
1]α-Al
2O
3, and (0
0
1)[1
0
0]Co
3O
4∥(0
0
1)[1
0
0]SrTiO
3. The resulting texture was studied as function of deposition temperature in the range 138–283
°C for MgO(1
0
0) and 186–283
°C for the remaining substrates. The topography and morphology of the films were investigated by atomic force microscopy (AFM), and in selected cases scanning electron microscopy. The specific electronic resistivities of as-deposited films grown on the various substrates were measured to be from 0.8 to 85
Ωcm.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2007.06.028</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2007-09, Vol.307 (2), p.457-465 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_30124636 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | A1. Epitaxial growth A2. Atomic layer deposition (ALD) A3. Atomic layer chemical vapour deposition (ALCVD) A3. Atomic layer epitaxy (ALE) B1. Cobalt oxide Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Vapor phase epitaxy growth from vapor phase |
| title | Epitaxial growth of cobalt oxide by atomic layer deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T13%3A01%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Epitaxial%20growth%20of%20cobalt%20oxide%20by%20atomic%20layer%20deposition&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Klepper,%20K.B.&rft.date=2007-09-15&rft.volume=307&rft.issue=2&rft.spage=457&rft.epage=465&rft.pages=457-465&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2007.06.028&rft_dat=%3Cproquest_cross%3E30124636%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=30124636&rft_id=info:pmid/&rft_els_id=S0022024807006094&rfr_iscdi=true |