Pinning properties in pure and SiC doped MgB2 bulk obtained by reactive Mg liquid infiltration technique
The effects of SiC additions on pinning properties of MgB2 bulk samples, obtained by reactive Mg liquid infiltration (RLI) in Boron powders preforms have been analysed by means of electric transport measurements at different applied magnetic fields. For doped and undoped systems the E vs. J characte...
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| Veröffentlicht in: | Physica. C, Superconductivity Superconductivity, 2007-09, Vol.460-462 (1), p.604-605 |
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| container_title | Physica. C, Superconductivity |
| container_volume | 460-462 |
| creator | Gozzelino, L. Minetti, B. Gerbaldo, R. Ghigo, G. Laviano, F. Lopardo, G. Giunchi, G. Perini, E. Cavallin, T. Mezzetti, E. |
| description | The effects of SiC additions on pinning properties of MgB2 bulk samples, obtained by reactive Mg liquid infiltration (RLI) in Boron powders preforms have been analysed by means of electric transport measurements at different applied magnetic fields. For doped and undoped systems the E vs. J characteristics as well as the pinning energy dependence as a function of the current density has been evaluated and analysed in the framework of thermal creep models. The doping-induced pinning centres, very effective in the pinning property improvements, turned out to be of similar nature than those of the undoped sample and can be mostly attributed to SiC reactive insertions inside the MgB2 grains with an increase of lattice disorder induced by the relative reaction products. |
| doi_str_mv | 10.1016/j.physc.2007.04.113 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30120860</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921453407006806</els_id><sourcerecordid>30120860</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-dc0cd50092dfb797d18131f932f39023674ebbc8ea63b7d5ac08df39b4020cbc3</originalsourceid><addsrcrecordid>eNp9UEuP1DAMjhBIDAu_gEsucGtxmk4fBw4wWh7SIpCAc5Q47o6HblqSzErz78kwK3HDF0v-HrY_IV4qqBWo7s2hXvenhHUD0NfQ1krpR2Kjhl5XjWr1Y7GBsVFVu9XtU_EspQOUUqPaiP03DoHDrVzjslLMTElykOsxkrTBy--8k74gXn65fd9Id5x_ycVly6GM3ElGspj5ngosZ_59ZF_kE8852sxLkJlwH8qcnosnk50TvXjoV-Lnh-sfu0_VzdePn3fvbirUXZsrj4B-C-VcP7l-7L0alFbTqJtJj9Dorm_JORzIdtr1fmsRBl8g10ID6FBfidcX3_JQWZuyueOENM820HJMRoNqYOigEPWFiHFJKdJk1sh3Np6MAnNO1RzM31TNOVUDrSmpFtWrB3ub0M5TtAE5_ZOOCnqlz-5vLzwqv94zRZOQKSB5joTZ-IX_u-cPmjmPZA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30120860</pqid></control><display><type>article</type><title>Pinning properties in pure and SiC doped MgB2 bulk obtained by reactive Mg liquid infiltration technique</title><source>Access via ScienceDirect (Elsevier)</source><creator>Gozzelino, L. ; Minetti, B. ; Gerbaldo, R. ; Ghigo, G. ; Laviano, F. ; Lopardo, G. ; Giunchi, G. ; Perini, E. ; Cavallin, T. ; Mezzetti, E.</creator><creatorcontrib>Gozzelino, L. ; Minetti, B. ; Gerbaldo, R. ; Ghigo, G. ; Laviano, F. ; Lopardo, G. ; Giunchi, G. ; Perini, E. ; Cavallin, T. ; Mezzetti, E.</creatorcontrib><description>The effects of SiC additions on pinning properties of MgB2 bulk samples, obtained by reactive Mg liquid infiltration (RLI) in Boron powders preforms have been analysed by means of electric transport measurements at different applied magnetic fields. For doped and undoped systems the E vs. J characteristics as well as the pinning energy dependence as a function of the current density has been evaluated and analysed in the framework of thermal creep models. The doping-induced pinning centres, very effective in the pinning property improvements, turned out to be of similar nature than those of the undoped sample and can be mostly attributed to SiC reactive insertions inside the MgB2 grains with an increase of lattice disorder induced by the relative reaction products.</description><identifier>ISSN: 0921-4534</identifier><identifier>EISSN: 1873-2143</identifier><identifier>DOI: 10.1016/j.physc.2007.04.113</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cuprates superconductors (high tc and insulating parent compounds) ; Electric transport characterization ; Exact sciences and technology ; Magnesium diboride ; Nano-doping ; Physics ; Pinning energy ; Properties of type I and type II superconductors ; Superconductivity ; Vortex lattices ,flux pinning, flux creep</subject><ispartof>Physica. C, Superconductivity, 2007-09, Vol.460-462 (1), p.604-605</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-dc0cd50092dfb797d18131f932f39023674ebbc8ea63b7d5ac08df39b4020cbc3</citedby><cites>FETCH-LOGICAL-c364t-dc0cd50092dfb797d18131f932f39023674ebbc8ea63b7d5ac08df39b4020cbc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physc.2007.04.113$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19107130$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gozzelino, L.</creatorcontrib><creatorcontrib>Minetti, B.</creatorcontrib><creatorcontrib>Gerbaldo, R.</creatorcontrib><creatorcontrib>Ghigo, G.</creatorcontrib><creatorcontrib>Laviano, F.</creatorcontrib><creatorcontrib>Lopardo, G.</creatorcontrib><creatorcontrib>Giunchi, G.</creatorcontrib><creatorcontrib>Perini, E.</creatorcontrib><creatorcontrib>Cavallin, T.</creatorcontrib><creatorcontrib>Mezzetti, E.</creatorcontrib><title>Pinning properties in pure and SiC doped MgB2 bulk obtained by reactive Mg liquid infiltration technique</title><title>Physica. C, Superconductivity</title><description>The effects of SiC additions on pinning properties of MgB2 bulk samples, obtained by reactive Mg liquid infiltration (RLI) in Boron powders preforms have been analysed by means of electric transport measurements at different applied magnetic fields. For doped and undoped systems the E vs. J characteristics as well as the pinning energy dependence as a function of the current density has been evaluated and analysed in the framework of thermal creep models. The doping-induced pinning centres, very effective in the pinning property improvements, turned out to be of similar nature than those of the undoped sample and can be mostly attributed to SiC reactive insertions inside the MgB2 grains with an increase of lattice disorder induced by the relative reaction products.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cuprates superconductors (high tc and insulating parent compounds)</subject><subject>Electric transport characterization</subject><subject>Exact sciences and technology</subject><subject>Magnesium diboride</subject><subject>Nano-doping</subject><subject>Physics</subject><subject>Pinning energy</subject><subject>Properties of type I and type II superconductors</subject><subject>Superconductivity</subject><subject>Vortex lattices ,flux pinning, flux creep</subject><issn>0921-4534</issn><issn>1873-2143</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9UEuP1DAMjhBIDAu_gEsucGtxmk4fBw4wWh7SIpCAc5Q47o6HblqSzErz78kwK3HDF0v-HrY_IV4qqBWo7s2hXvenhHUD0NfQ1krpR2Kjhl5XjWr1Y7GBsVFVu9XtU_EspQOUUqPaiP03DoHDrVzjslLMTElykOsxkrTBy--8k74gXn65fd9Id5x_ycVly6GM3ElGspj5ngosZ_59ZF_kE8852sxLkJlwH8qcnosnk50TvXjoV-Lnh-sfu0_VzdePn3fvbirUXZsrj4B-C-VcP7l-7L0alFbTqJtJj9Dorm_JORzIdtr1fmsRBl8g10ID6FBfidcX3_JQWZuyueOENM820HJMRoNqYOigEPWFiHFJKdJk1sh3Np6MAnNO1RzM31TNOVUDrSmpFtWrB3ub0M5TtAE5_ZOOCnqlz-5vLzwqv94zRZOQKSB5joTZ-IX_u-cPmjmPZA</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Gozzelino, L.</creator><creator>Minetti, B.</creator><creator>Gerbaldo, R.</creator><creator>Ghigo, G.</creator><creator>Laviano, F.</creator><creator>Lopardo, G.</creator><creator>Giunchi, G.</creator><creator>Perini, E.</creator><creator>Cavallin, T.</creator><creator>Mezzetti, E.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070901</creationdate><title>Pinning properties in pure and SiC doped MgB2 bulk obtained by reactive Mg liquid infiltration technique</title><author>Gozzelino, L. ; Minetti, B. ; Gerbaldo, R. ; Ghigo, G. ; Laviano, F. ; Lopardo, G. ; Giunchi, G. ; Perini, E. ; Cavallin, T. ; Mezzetti, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-dc0cd50092dfb797d18131f932f39023674ebbc8ea63b7d5ac08df39b4020cbc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cuprates superconductors (high tc and insulating parent compounds)</topic><topic>Electric transport characterization</topic><topic>Exact sciences and technology</topic><topic>Magnesium diboride</topic><topic>Nano-doping</topic><topic>Physics</topic><topic>Pinning energy</topic><topic>Properties of type I and type II superconductors</topic><topic>Superconductivity</topic><topic>Vortex lattices ,flux pinning, flux creep</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gozzelino, L.</creatorcontrib><creatorcontrib>Minetti, B.</creatorcontrib><creatorcontrib>Gerbaldo, R.</creatorcontrib><creatorcontrib>Ghigo, G.</creatorcontrib><creatorcontrib>Laviano, F.</creatorcontrib><creatorcontrib>Lopardo, G.</creatorcontrib><creatorcontrib>Giunchi, G.</creatorcontrib><creatorcontrib>Perini, E.</creatorcontrib><creatorcontrib>Cavallin, T.</creatorcontrib><creatorcontrib>Mezzetti, E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. C, Superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gozzelino, L.</au><au>Minetti, B.</au><au>Gerbaldo, R.</au><au>Ghigo, G.</au><au>Laviano, F.</au><au>Lopardo, G.</au><au>Giunchi, G.</au><au>Perini, E.</au><au>Cavallin, T.</au><au>Mezzetti, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pinning properties in pure and SiC doped MgB2 bulk obtained by reactive Mg liquid infiltration technique</atitle><jtitle>Physica. C, Superconductivity</jtitle><date>2007-09-01</date><risdate>2007</risdate><volume>460-462</volume><issue>1</issue><spage>604</spage><epage>605</epage><pages>604-605</pages><issn>0921-4534</issn><eissn>1873-2143</eissn><abstract>The effects of SiC additions on pinning properties of MgB2 bulk samples, obtained by reactive Mg liquid infiltration (RLI) in Boron powders preforms have been analysed by means of electric transport measurements at different applied magnetic fields. For doped and undoped systems the E vs. J characteristics as well as the pinning energy dependence as a function of the current density has been evaluated and analysed in the framework of thermal creep models. The doping-induced pinning centres, very effective in the pinning property improvements, turned out to be of similar nature than those of the undoped sample and can be mostly attributed to SiC reactive insertions inside the MgB2 grains with an increase of lattice disorder induced by the relative reaction products.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physc.2007.04.113</doi><tpages>2</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cuprates superconductors (high tc and insulating parent compounds) Electric transport characterization Exact sciences and technology Magnesium diboride Nano-doping Physics Pinning energy Properties of type I and type II superconductors Superconductivity Vortex lattices ,flux pinning, flux creep |
| title | Pinning properties in pure and SiC doped MgB2 bulk obtained by reactive Mg liquid infiltration technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T19%3A13%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Pinning%20properties%20in%20pure%20and%20SiC%20doped%20MgB2%20bulk%20obtained%20by%20reactive%20Mg%20liquid%20infiltration%20technique&rft.jtitle=Physica.%20C,%20Superconductivity&rft.au=Gozzelino,%20L.&rft.date=2007-09-01&rft.volume=460-462&rft.issue=1&rft.spage=604&rft.epage=605&rft.pages=604-605&rft.issn=0921-4534&rft.eissn=1873-2143&rft_id=info:doi/10.1016/j.physc.2007.04.113&rft_dat=%3Cproquest_cross%3E30120860%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=30120860&rft_id=info:pmid/&rft_els_id=S0921453407006806&rfr_iscdi=true |