Observation of thermal growth of silicide on titanium-deposited silicon surfaces

Titanium (Ti) silicide formed by evaporation of Ti onto Si surfaces is employed as a gate electrode for MOS devices. In order to elucidate the structure of Ti silicide grown at high-temperature at the atomic level, Ti was evaporated onto Si(0 0 1)-2 × 1 and Si(1 1 1)-7 × 7 surfaces at room temperatu...

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Veröffentlicht in:	Surface science 2007-09, Vol.601 (18), p.4444-4448
Hauptverfasser:	Iida, T., Koma, M., Ohwa, Y., Shudo, K., Ohno, S., Tanaka, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics Scanning tunneling microscopy Silicides Silicon Titanium
Online-Zugang:	Volltext
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