Ion irradiation effects on optical properties of silicon nitride films

We have investigated effects on amorphous Si 3N 4 films induced by 100 keV Ne and N ions. Si 3N 4 films were deposited on SiO 2-glass substrates by using reactive-RF-magnetron sputtering in N 2 gas at room temperature. It is found that the absorbance in the UV region increases with increasing Ne ion...

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Veröffentlicht in:	Surface & coatings technology 2007-08, Vol.201 (19), p.8322-8325
Hauptverfasser:	Matsunami, N., Shinde, N., Tazawa, M., Nakao, S., Sataka, M., Chimi, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.80.Jh 78.66.Db 81.05.Je Cross-disciplinary physics: materials science rheology Exact sciences and technology Ion irradiation Materials science Optical properties Physics Silicon nitride film Surface treatments
Online-Zugang:	Volltext
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