Diffusion-controlled growth of semiconductor nanowires: Vapor pressure versus high vacuum deposition

Theoretical model of nanowire formation is presented, that accounts for the adatom diffusion from the sidewalls and from the substrate surface to the wire top. Exact solution for the adatom diffusion flux from the surface to the wires is analyzed in different growth regimes. It is shown theoreticall...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Surface science 2007-09, Vol.601 (18), p.4395-4401
Hauptverfasser:	Dubrovskii, V.G., Sibirev, N.V., Suris, R.A., Cirlin, G.E., Harmand, J.C., Ustinov, V.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Kinetic growth model Nanowires
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!