Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

A non-destructive technique to image the dislocations and other extended defects in SiC epitaxial layers has been developed. Basal plane dislocations (BPDs) and threading dislocations (TDs) are imaged. Photoluminescence from the dislocations is excited with the 364 and/or 351 nm lines of an argon io...

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Veröffentlicht in:	Materials science forum 2007-09, Vol.556-557, p.295-298, Article 295
Hauptverfasser:	Zhang, Q., Stahlbush, Robert E., Sumakeris, Joseph J., Liu, Kendrick X.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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