Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics

Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics

A new FEOL metrology technique based on the use of elastic material probes (EM-Probes) is demonstrated for gate dielectric process development and monitoring for the 45 nm technology node and beyond. It is shown that critical gate dielectric electrical parameters such as Equivalent Oxide Thickness (...

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Veröffentlicht in:Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931) 2007-01, Vol.931, p.265-269
Hauptverfasser: Hillard, Robert J, Kalnas, Christine, Umeda, H
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container_title Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931)
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creator Hillard, Robert J
Kalnas, Christine
Umeda, H
description A new FEOL metrology technique based on the use of elastic material probes (EM-Probes) is demonstrated for gate dielectric process development and monitoring for the 45 nm technology node and beyond. It is shown that critical gate dielectric electrical parameters such as Equivalent Oxide Thickness (EOT), Gate Leakage Current Density (JLEAK), and Stress Induced Leakage Current (SILC) can be accurately measured in a non-damaging, non-contaminating fashion on product wafers. Correlations to final device parameters are discussed which are better than any other method available.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_30101286</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>30101286</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_301012863</originalsourceid><addsrcrecordid>eNqNzLFuwjAUQFFLBamhMPQP3sQW-hwbHI8IUiJoywADG7JSB14b4tZ2_p8M_YBOdzm6jD1znHFciBc-y5TWIucPbKJVjkrMJUrJccASRC3TTIrTIxuF8IWYaaXyhB3W5G0V4d21FJ2n9gKuhmJ_TLdvxXIHq6vxporWU4hUBaidhwPtP8C0n1DS5Zp-w8ZEC2uyTT_yPRqzYW2aYCd_fWLT1-K4KtMf7347G-L5RqGyTWNa67pwFsiRZ_lC_BveAfbTRxM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30101286</pqid></control><display><type>article</type><title>Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics</title><source>AIP Journals Complete</source><creator>Hillard, Robert J ; Kalnas, Christine ; Umeda, H</creator><creatorcontrib>Hillard, Robert J ; Kalnas, Christine ; Umeda, H</creatorcontrib><description>A new FEOL metrology technique based on the use of elastic material probes (EM-Probes) is demonstrated for gate dielectric process development and monitoring for the 45 nm technology node and beyond. It is shown that critical gate dielectric electrical parameters such as Equivalent Oxide Thickness (EOT), Gate Leakage Current Density (JLEAK), and Stress Induced Leakage Current (SILC) can be accurately measured in a non-damaging, non-contaminating fashion on product wafers. Correlations to final device parameters are discussed which are better than any other method available.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 9780735404410</identifier><identifier>ISBN: 0735404410</identifier><identifier>DOI: 10.1063/1.2799381</identifier><language>eng</language><ispartof>Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931), 2007-01, Vol.931, p.265-269</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Hillard, Robert J</creatorcontrib><creatorcontrib>Kalnas, Christine</creatorcontrib><creatorcontrib>Umeda, H</creatorcontrib><title>Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics</title><title>Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931)</title><description>A new FEOL metrology technique based on the use of elastic material probes (EM-Probes) is demonstrated for gate dielectric process development and monitoring for the 45 nm technology node and beyond. It is shown that critical gate dielectric electrical parameters such as Equivalent Oxide Thickness (EOT), Gate Leakage Current Density (JLEAK), and Stress Induced Leakage Current (SILC) can be accurately measured in a non-damaging, non-contaminating fashion on product wafers. Correlations to final device parameters are discussed which are better than any other method available.</description><issn>0094-243X</issn><isbn>9780735404410</isbn><isbn>0735404410</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqNzLFuwjAUQFFLBamhMPQP3sQW-hwbHI8IUiJoywADG7JSB14b4tZ2_p8M_YBOdzm6jD1znHFciBc-y5TWIucPbKJVjkrMJUrJccASRC3TTIrTIxuF8IWYaaXyhB3W5G0V4d21FJ2n9gKuhmJ_TLdvxXIHq6vxporWU4hUBaidhwPtP8C0n1DS5Zp-w8ZEC2uyTT_yPRqzYW2aYCd_fWLT1-K4KtMf7347G-L5RqGyTWNa67pwFsiRZ_lC_BveAfbTRxM</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Hillard, Robert J</creator><creator>Kalnas, Christine</creator><creator>Umeda, H</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070101</creationdate><title>Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics</title><author>Hillard, Robert J ; Kalnas, Christine ; Umeda, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_301012863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hillard, Robert J</creatorcontrib><creatorcontrib>Kalnas, Christine</creatorcontrib><creatorcontrib>Umeda, H</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hillard, Robert J</au><au>Kalnas, Christine</au><au>Umeda, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics</atitle><jtitle>Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931)</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>931</volume><spage>265</spage><epage>269</epage><pages>265-269</pages><issn>0094-243X</issn><isbn>9780735404410</isbn><isbn>0735404410</isbn><abstract>A new FEOL metrology technique based on the use of elastic material probes (EM-Probes) is demonstrated for gate dielectric process development and monitoring for the 45 nm technology node and beyond. It is shown that critical gate dielectric electrical parameters such as Equivalent Oxide Thickness (EOT), Gate Leakage Current Density (JLEAK), and Stress Induced Leakage Current (SILC) can be accurately measured in a non-damaging, non-contaminating fashion on product wafers. Correlations to final device parameters are discussed which are better than any other method available.</abstract><doi>10.1063/1.2799381</doi></addata></record>
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title Direct Monitoring of EOT-JLEAK Characteristics for SiON and High-k Gate Dielectrics
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T20%3A03%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20Monitoring%20of%20EOT-JLEAK%20Characteristics%20for%20SiON%20and%20High-k%20Gate%20Dielectrics&rft.jtitle=Frontiers%20of%20Characterization%20and%20Metrology%20for%20Nanoelectronics:%202007%20(AIP%20Conference%20Proceedings%20Volume%20931)&rft.au=Hillard,%20Robert%20J&rft.date=2007-01-01&rft.volume=931&rft.spage=265&rft.epage=269&rft.pages=265-269&rft.issn=0094-243X&rft.isbn=9780735404410&rft.isbn_list=0735404410&rft_id=info:doi/10.1063/1.2799381&rft_dat=%3Cproquest%3E30101286%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=30101286&rft_id=info:pmid/&rfr_iscdi=true