Minimizing the Carbon Content of Thin Ruthenium Films by MOCVD Precursor Complex Design and Process Control

[(Benzene)(1,3‐cyclohexadiene)Ru] was investigated as a designed metal‐organic (MO) CVD precursor where the inherent structural and chemical features of the ligands help the formation of pure ruthenium films. The investigations have been performed with Si wafers as the substrate at a total gas press...

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Veröffentlicht in:	Chemical vapor deposition 2007-08, Vol.13 (8), p.389-395
Hauptverfasser:	Schneider, A., Popovska, N., Jipa, I., Atakan, B., Siddiqi, M. A., Siddiqui, R., Zenneck, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Contamination Metal-organic CVD Ruthenium Thin films
Online-Zugang:	Volltext
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