Characterization of HgCdTe diodes on Si substrates using temperature-dependent current-voltage measurements and deep level transient spectroscopy

Reverse current in diodes can be dominated by generation processes, depending exponentially on temperature according to the rate-limiting step in the generation process. In this report, the current-voltage-temperature (IVT) relationship is analyzed for several midwave infrared and long-wave infrared...

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Veröffentlicht in:	Journal of electronic materials 2007-08, Vol.36 (8), p.832-836
Hauptverfasser:	JOHNSTONE, D, GOLDING, T. D, HELLMER, R, DINAN, J. H, CARMODY, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Ii-vi semiconductors Infrared radiation Instruments, apparatus, components and techniques common to several branches of physics and astronomy Mercury cadmium telluride Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spectrum analysis Surface and interface electron states Surface states, band structure, electron density of states Temperature Thermal instruments, apparatus and techniques Thermometry
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