Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs

SiC MOSFETs have very large interface trap densities which degrade device performance. The effect of traps on inversion layer mobility and inversion charge concentration has been studied, and mobility models suitable for inclusion in Drift-Diffusion simulators have been developed for steady state op...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2007-01, Vol.556-557, p.847-850
Hauptverfasser:	McGarrity, J.M., Potbhare, Siddharth, Lelis, Aivars J., Pennington, Gary, Goldsman, Neil
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!