Influence of In on the surface morphology of HVPE grown GaN
In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N 2 and H 2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the morphological quality of the grown layers; this ef...
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| Veröffentlicht in: | Journal of crystal growth 2007-09, Vol.307 (1), p.19-25 |
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| container_title | Journal of crystal growth |
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| creator | Dam, C.E.C. Hageman, P.R. van Enckevort, W.J.P. Bohnen, T. Larsen, P.K. |
| description | In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N
2 and H
2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the morphological quality of the grown layers; this effect is most strongly observed for N
2 as the carrier gas. It is found that adding In reduces the growth rate and also increases the steepness of the growth hillocks on the surface. The step velocity, which is calculated from hillock slopes and the growth rate, decreases upon adding In. Without In, trails are visible across the surface where steps are distorted by passing a dislocation outcrop. With In present this pinning is still present, however, the trails do not form. Two possible explanations for this phenomenon are an increased surface diffusion due to a mono- or bi-layer of In on the surface and the slower step motion when In is present. |
| doi_str_mv | 10.1016/j.jcrysgro.2007.06.005 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30072469</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024807005684</els_id><sourcerecordid>30072469</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-db1384139220d354a9bbcac000f47c29eb88a86b763243342f3bd04a9161ba593</originalsourceid><addsrcrecordid>eNqFkMtOwzAQRS0EEqXwCygb2CWMH3mJDagqbaUKWABby3HsNlEaFzsB5e9x1CKWbMbS-Ny5MxehawwRBpzc1VEt7eA21kQEII0giQDiEzTBWUrDGICcoomvJATCsnN04VwN4JUYJuh-1eqmV61UgdHBqg1MG3RbFbjeauGbO2P3W9OYzTD-Lz9e54E3-m6DhXi-RGdaNE5dHd8pen-av82W4fplsZo9rkNJY9aFZYFpxjDNCYHSd0ReFFJIv4JmqSS5KrJMZEmRJpQwShnRtCjBY37DQsQ5naLbw9y9NZ-9ch3fVU6qphGtMr3j1F9NWDKCyQGU1jhnleZ7W-2EHTgGPmbFa_6bFR-z4pBwn5UX3hwdhJOi0Va0snJ_6hwYZCnx3MOBU_7cr0pZ7mQ1hldWVsmOl6b6z-oHv62A6Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30072469</pqid></control><display><type>article</type><title>Influence of In on the surface morphology of HVPE grown GaN</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Dam, C.E.C. ; Hageman, P.R. ; van Enckevort, W.J.P. ; Bohnen, T. ; Larsen, P.K.</creator><creatorcontrib>Dam, C.E.C. ; Hageman, P.R. ; van Enckevort, W.J.P. ; Bohnen, T. ; Larsen, P.K.</creatorcontrib><description>In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N
2 and H
2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the morphological quality of the grown layers; this effect is most strongly observed for N
2 as the carrier gas. It is found that adding In reduces the growth rate and also increases the steepness of the growth hillocks on the surface. The step velocity, which is calculated from hillock slopes and the growth rate, decreases upon adding In. Without In, trails are visible across the surface where steps are distorted by passing a dislocation outcrop. With In present this pinning is still present, however, the trails do not form. Two possible explanations for this phenomenon are an increased surface diffusion due to a mono- or bi-layer of In on the surface and the slower step motion when In is present.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2007.06.005</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Hydride vapour phase epitaxy ; B1. Nitrides ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Exact sciences and technology ; Linear defects: dislocations, disclinations ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Structure and morphology; thickness ; Structure of solids and liquids; crystallography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2007-09, Vol.307 (1), p.19-25</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-db1384139220d354a9bbcac000f47c29eb88a86b763243342f3bd04a9161ba593</citedby><cites>FETCH-LOGICAL-c354t-db1384139220d354a9bbcac000f47c29eb88a86b763243342f3bd04a9161ba593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2007.06.005$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19040872$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dam, C.E.C.</creatorcontrib><creatorcontrib>Hageman, P.R.</creatorcontrib><creatorcontrib>van Enckevort, W.J.P.</creatorcontrib><creatorcontrib>Bohnen, T.</creatorcontrib><creatorcontrib>Larsen, P.K.</creatorcontrib><title>Influence of In on the surface morphology of HVPE grown GaN</title><title>Journal of crystal growth</title><description>In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N
2 and H
2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the morphological quality of the grown layers; this effect is most strongly observed for N
2 as the carrier gas. It is found that adding In reduces the growth rate and also increases the steepness of the growth hillocks on the surface. The step velocity, which is calculated from hillock slopes and the growth rate, decreases upon adding In. Without In, trails are visible across the surface where steps are distorted by passing a dislocation outcrop. With In present this pinning is still present, however, the trails do not form. Two possible explanations for this phenomenon are an increased surface diffusion due to a mono- or bi-layer of In on the surface and the slower step motion when In is present.</description><subject>A3. Hydride vapour phase epitaxy</subject><subject>B1. Nitrides</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Linear defects: dislocations, disclinations</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwCygb2CWMH3mJDagqbaUKWABby3HsNlEaFzsB5e9x1CKWbMbS-Ny5MxehawwRBpzc1VEt7eA21kQEII0giQDiEzTBWUrDGICcoomvJATCsnN04VwN4JUYJuh-1eqmV61UgdHBqg1MG3RbFbjeauGbO2P3W9OYzTD-Lz9e54E3-m6DhXi-RGdaNE5dHd8pen-av82W4fplsZo9rkNJY9aFZYFpxjDNCYHSd0ReFFJIv4JmqSS5KrJMZEmRJpQwShnRtCjBY37DQsQ5naLbw9y9NZ-9ch3fVU6qphGtMr3j1F9NWDKCyQGU1jhnleZ7W-2EHTgGPmbFa_6bFR-z4pBwn5UX3hwdhJOi0Va0snJ_6hwYZCnx3MOBU_7cr0pZ7mQ1hldWVsmOl6b6z-oHv62A6Q</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Dam, C.E.C.</creator><creator>Hageman, P.R.</creator><creator>van Enckevort, W.J.P.</creator><creator>Bohnen, T.</creator><creator>Larsen, P.K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20070901</creationdate><title>Influence of In on the surface morphology of HVPE grown GaN</title><author>Dam, C.E.C. ; Hageman, P.R. ; van Enckevort, W.J.P. ; Bohnen, T. ; Larsen, P.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-db1384139220d354a9bbcac000f47c29eb88a86b763243342f3bd04a9161ba593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A3. Hydride vapour phase epitaxy</topic><topic>B1. Nitrides</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Linear defects: dislocations, disclinations</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dam, C.E.C.</creatorcontrib><creatorcontrib>Hageman, P.R.</creatorcontrib><creatorcontrib>van Enckevort, W.J.P.</creatorcontrib><creatorcontrib>Bohnen, T.</creatorcontrib><creatorcontrib>Larsen, P.K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dam, C.E.C.</au><au>Hageman, P.R.</au><au>van Enckevort, W.J.P.</au><au>Bohnen, T.</au><au>Larsen, P.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of In on the surface morphology of HVPE grown GaN</atitle><jtitle>Journal of crystal growth</jtitle><date>2007-09-01</date><risdate>2007</risdate><volume>307</volume><issue>1</issue><spage>19</spage><epage>25</epage><pages>19-25</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N
2 and H
2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the morphological quality of the grown layers; this effect is most strongly observed for N
2 as the carrier gas. It is found that adding In reduces the growth rate and also increases the steepness of the growth hillocks on the surface. The step velocity, which is calculated from hillock slopes and the growth rate, decreases upon adding In. Without In, trails are visible across the surface where steps are distorted by passing a dislocation outcrop. With In present this pinning is still present, however, the trails do not form. Two possible explanations for this phenomenon are an increased surface diffusion due to a mono- or bi-layer of In on the surface and the slower step motion when In is present.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2007.06.005</doi><tpages>7</tpages></addata></record> |
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| subjects | A3. Hydride vapour phase epitaxy B1. Nitrides Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Vapor phase epitaxy growth from vapor phase |
| title | Influence of In on the surface morphology of HVPE grown GaN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T10%3A17%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20In%20on%20the%20surface%20morphology%20of%20HVPE%20grown%20GaN&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Dam,%20C.E.C.&rft.date=2007-09-01&rft.volume=307&rft.issue=1&rft.spage=19&rft.epage=25&rft.pages=19-25&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2007.06.005&rft_dat=%3Cproquest_cross%3E30072469%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=30072469&rft_id=info:pmid/&rft_els_id=S0022024807005684&rfr_iscdi=true |