Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide

The interactions between basal plane dislocations (BPDs) and threading screw and edge dislocations (TSDs and TEDs) in hexagonal SiC have been studied using synchrotron white beam x-ray topography (SWBXT). TSDs are shown to strongly interact with advancing basal plane dislocations (BPDs) while TEDs d...

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Veröffentlicht in:	Materials science forum 2007-01, Vol.556-557, p.231-234
Hauptverfasser:	Chen, Yi, Vetter, William M., Dudley, Michael, Ma, Rong Hui, Dhanaraj, Govindhan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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