The structural deformations in the Si/SiGe system induced by thermal annealing
The structural deformations in Si/SiGe system during thermal annealing were investigated by means of atomic force microscope (AFM) and high-resolution X-ray diffraction (HRXRD). The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample w...
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| Veröffentlicht in: | Journal of materials science 2007-07, Vol.42 (14), p.5312-5317 |
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| container_title | Journal of materials science |
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| creator | SHUQI ZHENG MORI, M TAMBO, T TATSUYAMA, C |
| description | The structural deformations in Si/SiGe system during thermal annealing were investigated by means of atomic force microscope (AFM) and high-resolution X-ray diffraction (HRXRD). The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements. |
| doi_str_mv | 10.1007/s10853-006-0901-2 |
| format | Article |
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The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-006-0901-2</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Annealing ; Atomic force microscopes ; Atomic force microscopy ; Condensed matter: structure, mechanical and thermal properties ; Deformation ; Diffraction ; Electron, ion, and scanning probe microscopy ; Exact sciences and technology ; High resolution ; Materials science ; Microscopes ; Morphology ; Physics ; Reciprocal space ; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc ; Silicon ; Silicon germanides ; Silicon substrates ; Structure and morphology; thickness ; Structure of solids and liquids; crystallography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Transmission, reflection and scanning electron microscopy(including ebic)</subject><ispartof>Journal of materials science, 2007-07, Vol.42 (14), p.5312-5317</ispartof><rights>2007 INIST-CNRS</rights><rights>Journal of Materials Science is a copyright of Springer, (2007). 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The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements.</description><subject>Annealing</subject><subject>Atomic force microscopes</subject><subject>Atomic force microscopy</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Deformation</subject><subject>Diffraction</subject><subject>Electron, ion, and scanning probe microscopy</subject><subject>Exact sciences and technology</subject><subject>High resolution</subject><subject>Materials science</subject><subject>Microscopes</subject><subject>Morphology</subject><subject>Physics</subject><subject>Reciprocal space</subject><subject>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>Silicon substrates</subject><subject>Structure and morphology; thickness</subject><subject>Structure of solids and liquids; 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MORI, M ; TAMBO, T ; TATSUYAMA, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-27b74bead732c2cc8675a3bc56d5f929ff31a0cf6ca93e33e008a400e1764a1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Annealing</topic><topic>Atomic force microscopes</topic><topic>Atomic force microscopy</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Deformation</topic><topic>Diffraction</topic><topic>Electron, ion, and scanning probe microscopy</topic><topic>Exact sciences and technology</topic><topic>High resolution</topic><topic>Materials science</topic><topic>Microscopes</topic><topic>Morphology</topic><topic>Physics</topic><topic>Reciprocal space</topic><topic>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</topic><topic>Silicon</topic><topic>Silicon germanides</topic><topic>Silicon substrates</topic><topic>Structure and morphology; 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The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1007/s10853-006-0901-2</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing Atomic force microscopes Atomic force microscopy Condensed matter: structure, mechanical and thermal properties Deformation Diffraction Electron, ion, and scanning probe microscopy Exact sciences and technology High resolution Materials science Microscopes Morphology Physics Reciprocal space Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Silicon Silicon germanides Silicon substrates Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Transmission, reflection and scanning electron microscopy(including ebic) |
| title | The structural deformations in the Si/SiGe system induced by thermal annealing |
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