Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD
We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of Zn 1 - x Co x O films on (1 1 0 2) sapphire substrates. The use of Zn(tmhd) 2 and Co(tmhd) 3 precursors produces high-quality films in which Co 2 + ions replace Zn 2+ without disrupting the ZnO la...
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| Veröffentlicht in: | Journal of magnetism and magnetic materials 2007-09, Vol.316 (2), p.e203-e206 |
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| container_end_page | e206 |
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| container_issue | 2 |
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| container_title | Journal of magnetism and magnetic materials |
| container_volume | 316 |
| creator | Zukova, Anna Teiserskis, Arunas Kazlauskiene, V. Gun’ko, Y.K. van Dijken, Sebastiaan |
| description | We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of
Zn
1
-
x
Co
x
O
films on (1
1
0
2) sapphire substrates. The use of Zn(tmhd)
2 and Co(tmhd)
3 precursors produces high-quality films in which Co
2
+
ions replace Zn
2+ without disrupting the ZnO lattice. The
Zn
1
-
x
Co
x
O
films are magnetic at room temperature for
x
⩽
0.10
and the magnetic moments are particularly large for small Co doping concentrations (
18.9
μ
B
/
Co
for
x
=
0.01
and
6.5
μ
B
/
Co
for
x
=
0.02
). These large moments and the decrease of the saturation moment with increasing Co content cannot be explained by the formation of Co clusters. We instead believe that the magnetic behavior of the PI-MOCVD grown samples is an intrinsic property of the
Zn
1
-
x
Co
x
O
films. |
| doi_str_mv | 10.1016/j.jmmm.2007.02.090 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30005241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0304885307001941</els_id><sourcerecordid>30005241</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-7a0cdcee3a6d6b0579376fbf4b37e907586d1b79923833d7bdda65254b05be903</originalsourceid><addsrcrecordid>eNp9kDtPxDAQhF2AxPH4A1Su6BLWcRInEg06ntKhK3hJNJZjOydHiR3sBHT_Hh9HTbXa1TejnUHonEBKgJSXXdoNw5BmACyFLIUaDtACKORJVRX0CB2H0AEAyatygd6fJz_Lafaix8IqPIiN1ZORePRu1H4yOmDX4qVLVNwV_rBr3Jp-CHjj3bfFzRaPcx90Ymyn5WScxU_r5dvNKTpsRbyf_c0T9Hp3-7J8SFbr-8fl9SqRlJIpYQKkklpTUaqygYLVlJVt0-YNZboGVlSlIg2r64xWlCrWKCXKIivyyDYRoCfoYu8b__2cdZj4YILUfS-sdnPgNCYtspxEMNuD0rsQvG756M0g_JYT4LveeMd3vfFdbxwyDr_uV3uRjhG-jPY8SKOt1Mr4mJYrZ_6T_wDatnjt</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30005241</pqid></control><display><type>article</type><title>Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD</title><source>Elsevier ScienceDirect Journals</source><creator>Zukova, Anna ; Teiserskis, Arunas ; Kazlauskiene, V. ; Gun’ko, Y.K. ; van Dijken, Sebastiaan</creator><creatorcontrib>Zukova, Anna ; Teiserskis, Arunas ; Kazlauskiene, V. ; Gun’ko, Y.K. ; van Dijken, Sebastiaan</creatorcontrib><description>We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of
Zn
1
-
x
Co
x
O
films on (1
1
0
2) sapphire substrates. The use of Zn(tmhd)
2 and Co(tmhd)
3 precursors produces high-quality films in which Co
2
+
ions replace Zn
2+ without disrupting the ZnO lattice. The
Zn
1
-
x
Co
x
O
films are magnetic at room temperature for
x
⩽
0.10
and the magnetic moments are particularly large for small Co doping concentrations (
18.9
μ
B
/
Co
for
x
=
0.01
and
6.5
μ
B
/
Co
for
x
=
0.02
). These large moments and the decrease of the saturation moment with increasing Co content cannot be explained by the formation of Co clusters. We instead believe that the magnetic behavior of the PI-MOCVD grown samples is an intrinsic property of the
Zn
1
-
x
Co
x
O
films.</description><identifier>ISSN: 0304-8853</identifier><identifier>DOI: 10.1016/j.jmmm.2007.02.090</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Magnetic semiconductor ; MOCVD ; ZnO</subject><ispartof>Journal of magnetism and magnetic materials, 2007-09, Vol.316 (2), p.e203-e206</ispartof><rights>2007 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-7a0cdcee3a6d6b0579376fbf4b37e907586d1b79923833d7bdda65254b05be903</citedby><cites>FETCH-LOGICAL-c331t-7a0cdcee3a6d6b0579376fbf4b37e907586d1b79923833d7bdda65254b05be903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0304885307001941$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Zukova, Anna</creatorcontrib><creatorcontrib>Teiserskis, Arunas</creatorcontrib><creatorcontrib>Kazlauskiene, V.</creatorcontrib><creatorcontrib>Gun’ko, Y.K.</creatorcontrib><creatorcontrib>van Dijken, Sebastiaan</creatorcontrib><title>Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD</title><title>Journal of magnetism and magnetic materials</title><description>We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of
Zn
1
-
x
Co
x
O
films on (1
1
0
2) sapphire substrates. The use of Zn(tmhd)
2 and Co(tmhd)
3 precursors produces high-quality films in which Co
2
+
ions replace Zn
2+ without disrupting the ZnO lattice. The
Zn
1
-
x
Co
x
O
films are magnetic at room temperature for
x
⩽
0.10
and the magnetic moments are particularly large for small Co doping concentrations (
18.9
μ
B
/
Co
for
x
=
0.01
and
6.5
μ
B
/
Co
for
x
=
0.02
). These large moments and the decrease of the saturation moment with increasing Co content cannot be explained by the formation of Co clusters. We instead believe that the magnetic behavior of the PI-MOCVD grown samples is an intrinsic property of the
Zn
1
-
x
Co
x
O
films.</description><subject>Magnetic semiconductor</subject><subject>MOCVD</subject><subject>ZnO</subject><issn>0304-8853</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kDtPxDAQhF2AxPH4A1Su6BLWcRInEg06ntKhK3hJNJZjOydHiR3sBHT_Hh9HTbXa1TejnUHonEBKgJSXXdoNw5BmACyFLIUaDtACKORJVRX0CB2H0AEAyatygd6fJz_Lafaix8IqPIiN1ZORePRu1H4yOmDX4qVLVNwV_rBr3Jp-CHjj3bfFzRaPcx90Ymyn5WScxU_r5dvNKTpsRbyf_c0T9Hp3-7J8SFbr-8fl9SqRlJIpYQKkklpTUaqygYLVlJVt0-YNZboGVlSlIg2r64xWlCrWKCXKIivyyDYRoCfoYu8b__2cdZj4YILUfS-sdnPgNCYtspxEMNuD0rsQvG756M0g_JYT4LveeMd3vfFdbxwyDr_uV3uRjhG-jPY8SKOt1Mr4mJYrZ_6T_wDatnjt</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Zukova, Anna</creator><creator>Teiserskis, Arunas</creator><creator>Kazlauskiene, V.</creator><creator>Gun’ko, Y.K.</creator><creator>van Dijken, Sebastiaan</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070901</creationdate><title>Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD</title><author>Zukova, Anna ; Teiserskis, Arunas ; Kazlauskiene, V. ; Gun’ko, Y.K. ; van Dijken, Sebastiaan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-7a0cdcee3a6d6b0579376fbf4b37e907586d1b79923833d7bdda65254b05be903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Magnetic semiconductor</topic><topic>MOCVD</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zukova, Anna</creatorcontrib><creatorcontrib>Teiserskis, Arunas</creatorcontrib><creatorcontrib>Kazlauskiene, V.</creatorcontrib><creatorcontrib>Gun’ko, Y.K.</creatorcontrib><creatorcontrib>van Dijken, Sebastiaan</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of magnetism and magnetic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zukova, Anna</au><au>Teiserskis, Arunas</au><au>Kazlauskiene, V.</au><au>Gun’ko, Y.K.</au><au>van Dijken, Sebastiaan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD</atitle><jtitle>Journal of magnetism and magnetic materials</jtitle><date>2007-09-01</date><risdate>2007</risdate><volume>316</volume><issue>2</issue><spage>e203</spage><epage>e206</epage><pages>e203-e206</pages><issn>0304-8853</issn><abstract>We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of
Zn
1
-
x
Co
x
O
films on (1
1
0
2) sapphire substrates. The use of Zn(tmhd)
2 and Co(tmhd)
3 precursors produces high-quality films in which Co
2
+
ions replace Zn
2+ without disrupting the ZnO lattice. The
Zn
1
-
x
Co
x
O
films are magnetic at room temperature for
x
⩽
0.10
and the magnetic moments are particularly large for small Co doping concentrations (
18.9
μ
B
/
Co
for
x
=
0.01
and
6.5
μ
B
/
Co
for
x
=
0.02
). These large moments and the decrease of the saturation moment with increasing Co content cannot be explained by the formation of Co clusters. We instead believe that the magnetic behavior of the PI-MOCVD grown samples is an intrinsic property of the
Zn
1
-
x
Co
x
O
films.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.jmmm.2007.02.090</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0304-8853 |
| ispartof | Journal of magnetism and magnetic materials, 2007-09, Vol.316 (2), p.e203-e206 |
| issn | 0304-8853 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_30005241 |
| source | Elsevier ScienceDirect Journals |
| subjects | Magnetic semiconductor MOCVD ZnO |
| title | Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD |
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