In and Al composition in nano-Cu(InAl)Se2 thin films from XRD and transmittance spectra

In and Al composition in nano-Cu(InAl)Se2 thin films from XRD and transmittance spectra

Cu(InAl)Se2 (CIAS) thin films of different thicknesses were prepared by chemical bath deposition technique (CBD) onto well-cleaned substrates at different temperatures from two different chemical baths. The thickness of the deposited films has been determined by gravimetric technique. The compositio...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2007-05, Vol.140 (1-2), p.59-63
Hauptverfasser: Kavitha, B., Dhanam, M.
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description Cu(InAl)Se2 (CIAS) thin films of different thicknesses were prepared by chemical bath deposition technique (CBD) onto well-cleaned substrates at different temperatures from two different chemical baths. The thickness of the deposited films has been determined by gravimetric technique. The composition of indium and aluminum constituents in the prepared CIAS films has been found from XRD and transmittance spectra. The results were confirmed with energy dispersive X-ray analysis (EDAX) and are presented in detail in this paper.
doi_str_mv 10.1016/j.mseb.2007.03.011
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title In and Al composition in nano-Cu(InAl)Se2 thin films from XRD and transmittance spectra
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