Influences of Ti, TiN, Ta and TaN layers on integration of low- k SiOC:H and Cu

The interactions between low- k material hydrogenated silicon oxycarbide (SiOC:H) and barrier layers, Ta, TaN, physical-vapor deposition (PVD) and chemical-vapor deposition (CVD) Ti and TiN, have been investigated. The results show these barriers except TaN can react with SiOC:H at evaluated tempera...

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Veröffentlicht in:	Materials chemistry and physics 2007-07, Vol.104 (1), p.18-23
Hauptverfasser:	Tsai, Kou-Chiang, Wu, Wen-Fa, Chao, Chuen-Guang, Hsu, Jwo-Lun, Chiang, Chiu-Fen
Format:	Artikel
Sprache:	eng
Schlagworte:	Cu + ions drift Hydrogenated silicon oxycarbide TaN TiN
Online-Zugang:	Volltext
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