Influences of Ti, TiN, Ta and TaN layers on integration of low- k SiOC:H and Cu

Influences of Ti, TiN, Ta and TaN layers on integration of low- k SiOC:H and Cu

The interactions between low- k material hydrogenated silicon oxycarbide (SiOC:H) and barrier layers, Ta, TaN, physical-vapor deposition (PVD) and chemical-vapor deposition (CVD) Ti and TiN, have been investigated. The results show these barriers except TaN can react with SiOC:H at evaluated tempera...

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Veröffentlicht in:Materials chemistry and physics 2007-07, Vol.104 (1), p.18-23
Hauptverfasser: Tsai, Kou-Chiang, Wu, Wen-Fa, Chao, Chuen-Guang, Hsu, Jwo-Lun, Chiang, Chiu-Fen
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Cu + ions drift
Hydrogenated silicon oxycarbide
TaN
TiN
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container_issue 1
container_start_page 18
container_title Materials chemistry and physics
container_volume 104
creator Tsai, Kou-Chiang
Wu, Wen-Fa
Chao, Chuen-Guang
Hsu, Jwo-Lun
Chiang, Chiu-Fen
description The interactions between low- k material hydrogenated silicon oxycarbide (SiOC:H) and barrier layers, Ta, TaN, physical-vapor deposition (PVD) and chemical-vapor deposition (CVD) Ti and TiN, have been investigated. The results show these barriers except TaN can react with SiOC:H at evaluated temperature. Furthermore, significant interactions of carbon and oxygen due to the degradation of the SiOC:H films upon annealing exist for all barrier/SiOC:H structures. The CVD-TiN structure can retard the hydrogen out-diffusion, while PVD-TiN structure induces the H out-diffusion from the SiOC:H films. By studying flat band voltage shift in C– V tests, it is demonstrated that Cu + ions drift into SiOC:H under electric field at elevated temperatures. A thin layer of TaN is proven to be good Cu drift barrier layer with SiOC:H dielectrics.
doi_str_mv 10.1016/j.matchemphys.2007.02.083
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source ScienceDirect Journals (5 years ago - present)
subjects Cu + ions drift
Hydrogenated silicon oxycarbide
TaN
TiN
title Influences of Ti, TiN, Ta and TaN layers on integration of low- k SiOC:H and Cu
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