Thick PZT layers deposited by gas flow sputtering
Polycrystalline lead zirconate titanate (PZT) thin films in the range of 3–16 μm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200–250 nm/min (1 1 1) tex...
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| Veröffentlicht in: | Sensors and actuators. A. Physical. 2007-03, Vol.135 (1), p.23-27 |
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| container_title | Sensors and actuators. A. Physical. |
| container_volume | 135 |
| creator | Jacobsen, H. Quenzer, H.-J. Wagner, B. Ortner, K. Jung, Th |
| description | Polycrystalline lead zirconate titanate (PZT) thin films in the range of 3–16
μm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200–250
nm/min (1
1
1) textured platinum was used as bottom electrode to assist the nucleation of PZT.
Material properties of the thin films like topography, morphology, chemical composition, and structure as well as the electrical- and electromechanical properties are evaluated. The sputtered PZT layers show a high relative permittivity
ɛ
r between 1000 and 1800 and a distinct ferroelectric hysteresis with a remnant polarisation of 17
μC/cm
2 and a coercive field strength of 5.4
kV/mm. Piezoelectric coefficients
d
33 of about 27.3–79.7
pm/V were observed. |
| doi_str_mv | 10.1016/j.sna.2006.10.011 |
| format | Article |
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μm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200–250
nm/min (1
1
1) textured platinum was used as bottom electrode to assist the nucleation of PZT.
Material properties of the thin films like topography, morphology, chemical composition, and structure as well as the electrical- and electromechanical properties are evaluated. The sputtered PZT layers show a high relative permittivity
ɛ
r between 1000 and 1800 and a distinct ferroelectric hysteresis with a remnant polarisation of 17
μC/cm
2 and a coercive field strength of 5.4
kV/mm. Piezoelectric coefficients
d
33 of about 27.3–79.7
pm/V were observed.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2006.10.011</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Actuator ; Gas flow sputtering ; Piezoelectric ; PZT</subject><ispartof>Sensors and actuators. A. Physical., 2007-03, Vol.135 (1), p.23-27</ispartof><rights>2006 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-99435883c10d300816927680faa5bfb73dbed9c32aea13393f8148193197d9f23</citedby><cites>FETCH-LOGICAL-c394t-99435883c10d300816927680faa5bfb73dbed9c32aea13393f8148193197d9f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sna.2006.10.011$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids></links><search><creatorcontrib>Jacobsen, H.</creatorcontrib><creatorcontrib>Quenzer, H.-J.</creatorcontrib><creatorcontrib>Wagner, B.</creatorcontrib><creatorcontrib>Ortner, K.</creatorcontrib><creatorcontrib>Jung, Th</creatorcontrib><title>Thick PZT layers deposited by gas flow sputtering</title><title>Sensors and actuators. A. Physical.</title><description>Polycrystalline lead zirconate titanate (PZT) thin films in the range of 3–16
μm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200–250
nm/min (1
1
1) textured platinum was used as bottom electrode to assist the nucleation of PZT.
Material properties of the thin films like topography, morphology, chemical composition, and structure as well as the electrical- and electromechanical properties are evaluated. The sputtered PZT layers show a high relative permittivity
ɛ
r between 1000 and 1800 and a distinct ferroelectric hysteresis with a remnant polarisation of 17
μC/cm
2 and a coercive field strength of 5.4
kV/mm. Piezoelectric coefficients
d
33 of about 27.3–79.7
pm/V were observed.</description><subject>Actuator</subject><subject>Gas flow sputtering</subject><subject>Piezoelectric</subject><subject>PZT</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwA9gysSXc5dLEFhOq-JKQYCgLi-XYl-KSJsVOQf33pCoz0-k9vc9J9whxiZAhYHm9ymJnshygHHMGiEdigrKilKBUx2ICKi_SIi-qU3EW4woAiKpqInDx4e1n8vq-SFqz4xATx5s--oFdUu-SpYlJ0_Y_Sdxsh4GD75bn4qQxbeSLvzkVb_d3i_lj-vzy8DS_fU4tqWJIlSpoJiVZBEcAEkuVV6WExphZ3dQVuZqdspQbNkikqJFYSFSEqnKqyWkqrg53N6H_2nIc9NpHy21rOu63UedKSZKgxiIeijb0MQZu9Cb4tQk7jaD3cvRKj3L0Xs5-NcoZmZsDw-MH356DjtZzZ9n5wHbQrvf_0L-42mrO</recordid><startdate>20070301</startdate><enddate>20070301</enddate><creator>Jacobsen, H.</creator><creator>Quenzer, H.-J.</creator><creator>Wagner, B.</creator><creator>Ortner, K.</creator><creator>Jung, Th</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20070301</creationdate><title>Thick PZT layers deposited by gas flow sputtering</title><author>Jacobsen, H. ; Quenzer, H.-J. ; Wagner, B. ; Ortner, K. ; Jung, Th</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c394t-99435883c10d300816927680faa5bfb73dbed9c32aea13393f8148193197d9f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Actuator</topic><topic>Gas flow sputtering</topic><topic>Piezoelectric</topic><topic>PZT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jacobsen, H.</creatorcontrib><creatorcontrib>Quenzer, H.-J.</creatorcontrib><creatorcontrib>Wagner, B.</creatorcontrib><creatorcontrib>Ortner, K.</creatorcontrib><creatorcontrib>Jung, Th</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jacobsen, H.</au><au>Quenzer, H.-J.</au><au>Wagner, B.</au><au>Ortner, K.</au><au>Jung, Th</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thick PZT layers deposited by gas flow sputtering</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2007-03-01</date><risdate>2007</risdate><volume>135</volume><issue>1</issue><spage>23</spage><epage>27</epage><pages>23-27</pages><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>Polycrystalline lead zirconate titanate (PZT) thin films in the range of 3–16
μm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200–250
nm/min (1
1
1) textured platinum was used as bottom electrode to assist the nucleation of PZT.
Material properties of the thin films like topography, morphology, chemical composition, and structure as well as the electrical- and electromechanical properties are evaluated. The sputtered PZT layers show a high relative permittivity
ɛ
r between 1000 and 1800 and a distinct ferroelectric hysteresis with a remnant polarisation of 17
μC/cm
2 and a coercive field strength of 5.4
kV/mm. Piezoelectric coefficients
d
33 of about 27.3–79.7
pm/V were observed.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2006.10.011</doi><tpages>5</tpages></addata></record> |
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| issn | 0924-4247 1873-3069 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Actuator Gas flow sputtering Piezoelectric PZT |
| title | Thick PZT layers deposited by gas flow sputtering |
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