Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films

Room temperature ferromagnetism was observed in HfO 2, TiO 2, and In 2O 3 films grown on yttrium-stabilized zirconia, LaAlO 3, and MgO substrates, respectively. While the magnetic moment is rather modest in the case of In 2O 3 films, it is very large in the other two cases. Thin film form, which mig...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2007-09, Vol.316 (2), p.214-217
Hauptverfasser: Hong, Nguyen Hoa, Sakai, Joe, Gervais, François
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Sprache:eng
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