Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation

We report on the transformation behaviour of metastable defects labelled EM1 (Ec-0.29 eV), EM2 (Ec-0.41 eV) and EM3 (Ec-0.55 eV) which are induced in n-type silicon by hydrogen implantation. Hydrogen implantation was performed at 88 K with an energy of 90 keV to a dose of 2 × 1010 cm−2. After fabric...

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Veröffentlicht in:	EPJ. Applied physics (Print) 2004-07, Vol.27 (1-3), p.111-114
Hauptverfasser:	Tokuda, Y., Sugiyama, T., Kanazawa, S., Iwata, H., Ishiko, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.55.Cn Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in germanium and silicon Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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