ZnSe sintered films : Growth and characterization
The II-VI compound semiconductor, ZnSe having wide band gap between 2.58 and 2.82eV is a promising material for use in photovoltaic devices, blue light emitting diodes and laser diodes. Several methods have been used to prepare ZnSe thin films. We have deposited ZnSe films on ultra-clean glass subst...
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| Veröffentlicht in: | Applied surface science 2007-01, Vol.253 (7), p.3543-3546 |
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| container_issue | 7 |
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| container_title | Applied surface science |
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| creator | KUMAR, Vipin KHAN, K. L. A SINGH, Gajendra SHARMA, T. P HUSSAIN, M |
| description | The II-VI compound semiconductor, ZnSe having wide band gap between 2.58 and 2.82eV is a promising material for use in photovoltaic devices, blue light emitting diodes and laser diodes. Several methods have been used to prepare ZnSe thin films. We have deposited ZnSe films on ultra-clean glass substrate by sintering technique. The optical, structural and electrical properties of ZnSe thin films have been examined. The optical band gap of these films is studied using reflection spectra in wavelength range 325-600nm and structure of these films is studied using XRD. The DC conductivity of the films was measured in vacuum by two-probe technique. Sintering is a very simple and viable method compared to other intensive methods. The results of the present investigation will be useful in characterizing the material ZnSe for its applications in photovoltaics. |
| doi_str_mv | 10.1016/j.apsusc.2006.07.066 |
| format | Article |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics |
| title | ZnSe sintered films : Growth and characterization |
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