Two-dimensional simulation of GaInP/GaAs/Ge triple junction solar cell

In this work, two‐dimensional simulation has been performed on the triple‐junction (TJ) GaInP/GaAs/Ge solar cell devices based on the Crosslight APSYS with improved tunnel junction model. The APSYS simulator solves several interwoven equations including the basic Poisson's equation, and drift‐diffusion current equations for electrons and holes. Basic physical quantities like band diagrams, optical absorption and generation are calculated. The simulated IV characteristics and offset voltage agree well with the published experimental results for TJ GaInP/GaAs/Ge solar cell device. The quantum efficiency spectra have also been computed. Possible design optimization issues to enhance the quantum efficiency have also been discussed with respect to some applicable features of Crosslight APSYS. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)