Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)
The optical performance of potential capping materials, Ru and Si, were quantitatively investigated by simulating the reflectivity on a mask and aerial image intensity transferred through the system. The reflectivity on the capping surface was calculated according to the capping thickness variation...
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| Veröffentlicht in: | Microelectronic engineering 2007-05, Vol.84 (5), p.1023-1026 |
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| container_title | Microelectronic engineering |
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| creator | Kang, In-Yong Ahn, Jinho Kim, Chung Yong Oh, Hye-Keun Chung, Yong-Chae |
| description | The optical performance of potential capping materials, Ru and Si, were quantitatively investigated by simulating the reflectivity on a mask and aerial image intensity transferred through the system. The reflectivity on the capping surface was calculated according to the capping thickness variation by using the Fresnel equation. For the calculation of the aerial image intensity, SOLID-EUV, which is capable of rigorous electromagnetic-field computation, was employed. Through the investigation of pattern image characteristics for partially oxidized capping models, the Ru capping model turned out to show a higher EUV reflectivity, smaller line variation, and a higher oxidation sensitivity compared to the case of the Si capping model. It could be reasonably concluded that Ru can be proposed as a potential capping material for achieving a better optical performance considering the experimentally proven high oxidation stability of the Ru capping model. |
| doi_str_mv | 10.1016/j.mee.2007.01.019 |
| format | Article |
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It could be reasonably concluded that Ru can be proposed as a potential capping material for achieving a better optical performance considering the experimentally proven high oxidation stability of the Ru capping model.</description><subject>Aerial image intensity</subject><subject>Applied sciences</subject><subject>Capping layer</subject><subject>Electronics</subject><subject>EUVL</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Oxidation</subject><subject>Reflectivity</subject><subject>Ru/Mo/Si</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kang, In-Yong</creatorcontrib><creatorcontrib>Ahn, Jinho</creatorcontrib><creatorcontrib>Kim, Chung Yong</creatorcontrib><creatorcontrib>Oh, Hye-Keun</creatorcontrib><creatorcontrib>Chung, Yong-Chae</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kang, In-Yong</au><au>Ahn, Jinho</au><au>Kim, Chung Yong</au><au>Oh, Hye-Keun</au><au>Chung, Yong-Chae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)</atitle><jtitle>Microelectronic engineering</jtitle><date>2007-05-01</date><risdate>2007</risdate><volume>84</volume><issue>5</issue><spage>1023</spage><epage>1026</epage><pages>1023-1026</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>The optical performance of potential capping materials, Ru and Si, were quantitatively investigated by simulating the reflectivity on a mask and aerial image intensity transferred through the system. 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| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2007-05, Vol.84 (5), p.1023-1026 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29961854 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Aerial image intensity Applied sciences Capping layer Electronics EUVL Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Oxidation Reflectivity Ru/Mo/Si Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL) |
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