Electron field emission from boron doped microcrystalline diamond
Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level ( N B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C r...
Gespeichert in:
| Veröffentlicht in: | Applied surface science 2007-07, Vol.253 (18), p.7381-7386 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 7386 |
|---|---|
| container_issue | 18 |
| container_start_page | 7381 |
| container_title | Applied surface science |
| container_volume | 253 |
| creator | Roos, M. Baranauskas, V. Fontana, M. Ceragioli, H.J. Peterlevitz, A.C. Mallik, K. Degasperi, F.T. |
| description | Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (
N
B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (
E
th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500
nA
cm
−2 were obtained using electric fields less than 8
V/μm. |
| doi_str_mv | 10.1016/j.apsusc.2007.03.023 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29950810</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S016943320700459X</els_id><sourcerecordid>29950810</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-2623dd6b7583e7495ca926b98ff29fb3e96ab83dbf0202b95daa4762077e05fb3</originalsourceid><addsrcrecordid>eNp9kEtLxDAQgIMouK7-Aw-96K01TdomuQjLsj5gwYueQ5pMIUva1KQr7L83pQvePA3DfPP6ELovcVHisnk6FGqMx6gLgjErMC0woRdoVXJG87rm1SVaJUzkFaXkGt3EeMC4JKm6QpudAz0FP2SdBWcy6G2Mdk6D77PWzxXjRzBZb3XwOpzipJyzA2TGqt4P5hZddcpFuDvHNfp62X1u3_L9x-v7drPPNW3YlJOGUGOaltWcAqtErZUgTSt41xHRtRREo1pOTdthgkkraqNUxRqCGQNcJ2CNHpe5Y_DfR4iTTKdqcE4N4I9REiFqzEucwGoB070xBujkGGyvwkmWWM6-5EEuvuTsS2Iqk6_U9nCer6JWrgtq0Db-9XJeEVrxxD0vHKRnfywEGbWFQYOxIamUxtv_F_0C8jaDRA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29950810</pqid></control><display><type>article</type><title>Electron field emission from boron doped microcrystalline diamond</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Roos, M. ; Baranauskas, V. ; Fontana, M. ; Ceragioli, H.J. ; Peterlevitz, A.C. ; Mallik, K. ; Degasperi, F.T.</creator><creatorcontrib>Roos, M. ; Baranauskas, V. ; Fontana, M. ; Ceragioli, H.J. ; Peterlevitz, A.C. ; Mallik, K. ; Degasperi, F.T.</creatorcontrib><description>Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (
N
B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (
E
th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500
nA
cm
−2 were obtained using electric fields less than 8
V/μm.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2007.03.023</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Boron doped diamond surface ; Chemical vapor deposited diamond ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Electron field emission ; Emission properties of surface sites ; Exact sciences and technology ; Physics ; Threshold field for electron emission</subject><ispartof>Applied surface science, 2007-07, Vol.253 (18), p.7381-7386</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-2623dd6b7583e7495ca926b98ff29fb3e96ab83dbf0202b95daa4762077e05fb3</citedby><cites>FETCH-LOGICAL-c367t-2623dd6b7583e7495ca926b98ff29fb3e96ab83dbf0202b95daa4762077e05fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S016943320700459X$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18842348$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Roos, M.</creatorcontrib><creatorcontrib>Baranauskas, V.</creatorcontrib><creatorcontrib>Fontana, M.</creatorcontrib><creatorcontrib>Ceragioli, H.J.</creatorcontrib><creatorcontrib>Peterlevitz, A.C.</creatorcontrib><creatorcontrib>Mallik, K.</creatorcontrib><creatorcontrib>Degasperi, F.T.</creatorcontrib><title>Electron field emission from boron doped microcrystalline diamond</title><title>Applied surface science</title><description>Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (
N
B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (
E
th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500
nA
cm
−2 were obtained using electric fields less than 8
V/μm.</description><subject>Boron doped diamond surface</subject><subject>Chemical vapor deposited diamond</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron field emission</subject><subject>Emission properties of surface sites</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Threshold field for electron emission</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAQgIMouK7-Aw-96K01TdomuQjLsj5gwYueQ5pMIUva1KQr7L83pQvePA3DfPP6ELovcVHisnk6FGqMx6gLgjErMC0woRdoVXJG87rm1SVaJUzkFaXkGt3EeMC4JKm6QpudAz0FP2SdBWcy6G2Mdk6D77PWzxXjRzBZb3XwOpzipJyzA2TGqt4P5hZddcpFuDvHNfp62X1u3_L9x-v7drPPNW3YlJOGUGOaltWcAqtErZUgTSt41xHRtRREo1pOTdthgkkraqNUxRqCGQNcJ2CNHpe5Y_DfR4iTTKdqcE4N4I9REiFqzEucwGoB070xBujkGGyvwkmWWM6-5EEuvuTsS2Iqk6_U9nCer6JWrgtq0Db-9XJeEVrxxD0vHKRnfywEGbWFQYOxIamUxtv_F_0C8jaDRA</recordid><startdate>20070715</startdate><enddate>20070715</enddate><creator>Roos, M.</creator><creator>Baranauskas, V.</creator><creator>Fontana, M.</creator><creator>Ceragioli, H.J.</creator><creator>Peterlevitz, A.C.</creator><creator>Mallik, K.</creator><creator>Degasperi, F.T.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20070715</creationdate><title>Electron field emission from boron doped microcrystalline diamond</title><author>Roos, M. ; Baranauskas, V. ; Fontana, M. ; Ceragioli, H.J. ; Peterlevitz, A.C. ; Mallik, K. ; Degasperi, F.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-2623dd6b7583e7495ca926b98ff29fb3e96ab83dbf0202b95daa4762077e05fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Boron doped diamond surface</topic><topic>Chemical vapor deposited diamond</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron field emission</topic><topic>Emission properties of surface sites</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Threshold field for electron emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roos, M.</creatorcontrib><creatorcontrib>Baranauskas, V.</creatorcontrib><creatorcontrib>Fontana, M.</creatorcontrib><creatorcontrib>Ceragioli, H.J.</creatorcontrib><creatorcontrib>Peterlevitz, A.C.</creatorcontrib><creatorcontrib>Mallik, K.</creatorcontrib><creatorcontrib>Degasperi, F.T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Roos, M.</au><au>Baranauskas, V.</au><au>Fontana, M.</au><au>Ceragioli, H.J.</au><au>Peterlevitz, A.C.</au><au>Mallik, K.</au><au>Degasperi, F.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron field emission from boron doped microcrystalline diamond</atitle><jtitle>Applied surface science</jtitle><date>2007-07-15</date><risdate>2007</risdate><volume>253</volume><issue>18</issue><spage>7381</spage><epage>7386</epage><pages>7381-7386</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (
N
B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (
E
th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500
nA
cm
−2 were obtained using electric fields less than 8
V/μm.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2007.03.023</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0169-4332 |
| ispartof | Applied surface science, 2007-07, Vol.253 (18), p.7381-7386 |
| issn | 0169-4332 1873-5584 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29950810 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Boron doped diamond surface Chemical vapor deposited diamond Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electron field emission Emission properties of surface sites Exact sciences and technology Physics Threshold field for electron emission |
| title | Electron field emission from boron doped microcrystalline diamond |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T11%3A44%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%20field%20emission%20from%20boron%20doped%20microcrystalline%20diamond&rft.jtitle=Applied%20surface%20science&rft.au=Roos,%20M.&rft.date=2007-07-15&rft.volume=253&rft.issue=18&rft.spage=7381&rft.epage=7386&rft.pages=7381-7386&rft.issn=0169-4332&rft.eissn=1873-5584&rft_id=info:doi/10.1016/j.apsusc.2007.03.023&rft_dat=%3Cproquest_cross%3E29950810%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29950810&rft_id=info:pmid/&rft_els_id=S016943320700459X&rfr_iscdi=true |