Tunable nonlinear current-voltage characteristic in four-terminal ballistic nano-junctions
We report on low temperature (4.2K - 140K) measurements of four-terminal ballistic nano-junctions, etched on a two-dimensional electron gas confined in an InGaAs/InAlAs heterostructure. A symmetry-breaking artificial scatterer is introduced in the center of the junctions. The geometry of the junctio...
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| Veröffentlicht in: | Bulletin of the American Physical Society 2004-03, Vol.49 (1) |
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| container_title | Bulletin of the American Physical Society |
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| creator | Hackens, B Gence, L Farhi, G Faniel, S Gustin, C Bayot, V Wallart, X Bollaert, S Cappy, A Vasallo, B G Mateos, J Gonzalez, T |
| description | We report on low temperature (4.2K - 140K) measurements of four-terminal ballistic nano-junctions, etched on a two-dimensional electron gas confined in an InGaAs/InAlAs heterostructure. A symmetry-breaking artificial scatterer is introduced in the center of the junctions. The geometry of the junctions and scatterers is inspired by a recent theoretical work by Fleischmann and Geisel (R. Fleischmann and T. Geisel, Phys. Rev. Lett. 8,016804 (2002)). We measure the voltage V_LU generated between the upper and lower contacts when a current I_SD flows between the left and right contacts. We demonstrate that the shape, the amplitude and even the sign of the nonlinear V_LU(I_SD) characteristic can be tuned by applying voltage biases on side gates and/or illuminating the sample. The origin of this behavior is discussed using comparisons to Monte-Carlo (semiclassical) simulations of our devices. |
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| title | Tunable nonlinear current-voltage characteristic in four-terminal ballistic nano-junctions |
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