Study of copper-silicon junctions fabricated by selective electroless deposition
The metal semiconductor contacts have been fabricated by electroless deposition of copper on chemically cleaned p-type silicon and their characteristics studied. A continuous thin film of good quality and adhesion is formed. The values of barrier height and the ideality factor are found to be compar...
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| Veröffentlicht in: | Indian journal of pure & applied physics 2004-12, Vol.42 (12), p.916-920 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The metal semiconductor contacts have been fabricated by electroless deposition of copper on chemically cleaned p-type silicon and their characteristics studied. A continuous thin film of good quality and adhesion is formed. The values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts. The barrier heights measured from I-V and C-V characteristics are also found to be comparable. |
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| ISSN: | 0019-5596 |