Tuning of the Electronic Properties of Self-assembled InAs/InP(001) Quantum Dots by Rapid Thermal Annealing and Low-energy Ion Implantation
We have investigated the effect of post-growth rapid thermal annealing (RTA), grown-in defects technique and ion implantation on the low temperature photoluminescence (PL) spectra of self-assembled InAs/InP(001) quantum dots (QD). A blueshift up to 90 meV of the PL spectra is observed after RTA at 8...
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| Veröffentlicht in: | Bulletin of the American Physical Society 2004-03, Vol.49 (1) |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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