Performance characteristics of planar ion-implantation isolated heterojunction, near-infrared, and short-wave infrared hgcdte devices
Two-dimensional near-infrared (NIR) and short-wave infrared (SWIR) HgCdTe arrays have been produced using planar ion-implantation isolated heterojunction (PI3H) device technology. This paper is an extension of an earlier study in which focal plane arrays (FPAs) were fabricated based on heterojunctio...
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| Veröffentlicht in: | Journal of electronic materials 2004-06, Vol.33 (6), p.615-620 |
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| creator | TERTERIAN, S CHU, M MESROPIAN, S GURGENIAN, H BENSON, J. D DINAN, J. H |
| description | Two-dimensional near-infrared (NIR) and short-wave infrared (SWIR) HgCdTe arrays have been produced using planar ion-implantation isolated heterojunction (PI3H) device technology. This paper is an extension of an earlier study in which focal plane arrays (FPAs) were fabricated based on heterojunction-mesa and ion-implanted planar device structures. The PI3H device structure is pursued in order to verify whether it can encompass both the superb multilayer characteristics of heterojunction detectors as well as the planar integrity of ion-implanted devices. The PI3H devices are characterized, and R^sub 0^A measurements are carried out at different temperatures and compared to those obtained from heterojunction-mesa and ion-implanted device structures. Data shows the PI3H devices to be superior to both heterojunction-mesa and ion-implanted detectors at temperatures between 130 K and 300 K. Performance characteristics of the thermoelectric (TE) cooled SWIR FPAs with 320 × 256 format, as well as NIR FPAs with 640 × 512 format based on the PI3H device structure are also discussed. [PUBLICATION ABSTRACT] Key words: HgCdTe, CdZnTe, focal plane array (FPA), near infrared (NIR), short-wave infrared (SWIR), infrared detectors |
| doi_str_mv | 10.1007/s11664-004-0056-3 |
| format | Article |
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D ; DINAN, J. H</creator><creatorcontrib>TERTERIAN, S ; CHU, M ; MESROPIAN, S ; GURGENIAN, H ; BENSON, J. D ; DINAN, J. H</creatorcontrib><description>Two-dimensional near-infrared (NIR) and short-wave infrared (SWIR) HgCdTe arrays have been produced using planar ion-implantation isolated heterojunction (PI3H) device technology. This paper is an extension of an earlier study in which focal plane arrays (FPAs) were fabricated based on heterojunction-mesa and ion-implanted planar device structures. The PI3H device structure is pursued in order to verify whether it can encompass both the superb multilayer characteristics of heterojunction detectors as well as the planar integrity of ion-implanted devices. The PI3H devices are characterized, and R^sub 0^A measurements are carried out at different temperatures and compared to those obtained from heterojunction-mesa and ion-implanted device structures. Data shows the PI3H devices to be superior to both heterojunction-mesa and ion-implanted detectors at temperatures between 130 K and 300 K. Performance characteristics of the thermoelectric (TE) cooled SWIR FPAs with 320 × 256 format, as well as NIR FPAs with 640 × 512 format based on the PI3H device structure are also discussed. [PUBLICATION ABSTRACT] Key words: HgCdTe, CdZnTe, focal plane array (FPA), near infrared (NIR), short-wave infrared (SWIR), infrared detectors</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-004-0056-3</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Cadmium zinc telluride ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Doping and impurity implantation in iii-v and ii-vi semiconductors ; Exact sciences and technology ; Growth from melts; zone melting and refining ; Infrared radiation ; Ion implantation ; Materials science ; Mercury cadmium telluride ; Methods of crystal growth; physics of crystal growth ; Physics ; Sensors ; Structure of solids and liquids; crystallography</subject><ispartof>Journal of electronic materials, 2004-06, Vol.33 (6), p.615-620</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jun 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-370b031ef9ee7e1b947633783630f813e269a7ff1788f4aa4b67792423a40ff63</citedby><cites>FETCH-LOGICAL-c331t-370b031ef9ee7e1b947633783630f813e269a7ff1788f4aa4b67792423a40ff63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>310,311,315,781,785,790,791,23935,23936,25145,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15862316$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>TERTERIAN, S</creatorcontrib><creatorcontrib>CHU, M</creatorcontrib><creatorcontrib>MESROPIAN, S</creatorcontrib><creatorcontrib>GURGENIAN, H</creatorcontrib><creatorcontrib>BENSON, J. D</creatorcontrib><creatorcontrib>DINAN, J. H</creatorcontrib><title>Performance characteristics of planar ion-implantation isolated heterojunction, near-infrared, and short-wave infrared hgcdte devices</title><title>Journal of electronic materials</title><description>Two-dimensional near-infrared (NIR) and short-wave infrared (SWIR) HgCdTe arrays have been produced using planar ion-implantation isolated heterojunction (PI3H) device technology. This paper is an extension of an earlier study in which focal plane arrays (FPAs) were fabricated based on heterojunction-mesa and ion-implanted planar device structures. The PI3H device structure is pursued in order to verify whether it can encompass both the superb multilayer characteristics of heterojunction detectors as well as the planar integrity of ion-implanted devices. The PI3H devices are characterized, and R^sub 0^A measurements are carried out at different temperatures and compared to those obtained from heterojunction-mesa and ion-implanted device structures. Data shows the PI3H devices to be superior to both heterojunction-mesa and ion-implanted detectors at temperatures between 130 K and 300 K. Performance characteristics of the thermoelectric (TE) cooled SWIR FPAs with 320 × 256 format, as well as NIR FPAs with 640 × 512 format based on the PI3H device structure are also discussed. [PUBLICATION ABSTRACT] Key words: HgCdTe, CdZnTe, focal plane array (FPA), near infrared (NIR), short-wave infrared (SWIR), infrared detectors</description><subject>Cadmium zinc telluride</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping and impurity implantation in iii-v and ii-vi semiconductors</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Infrared radiation</subject><subject>Ion implantation</subject><subject>Materials science</subject><subject>Mercury cadmium telluride</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Sensors</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNpdkVGLFDEMxwdRcD39AL4VQZ-u2kxm2plHOU7v4EAfFHwr2U7qdpmdrm33xA_g97bDngg-hJDkl5Dk3zQvQb0Fpcy7DKB1J5VardcSHzUb6DuUMOhvj5uNQg2yb7F_2jzLea8U9DDApvn9mZOP6UCLY-F2lMgVTiGX4LKIXhxnWiiJEBcZDmtQqNRAhBxnKjyJHVc-7k-LW_OXYmFKMiw-UeLpUtAyibyLqcifdM_ib0HsvrupsJj4PjjOz5snnubMLx78RfP1w_WXqxt59-nj7dX7O-kQoUg0aqsQ2I_MhmE7dkYjmgE1Kj8AcqtHMt6DGQbfEXVbbczYdi1Sp7zXeNG8Oc89pvjjxLnYQ8iO53oXx1O27Ti2Rqm2gq_-A_fxlJa6m21VNwLWt1YIzpBLMefE3h5TOFD6ZUHZVRV7VsVWVeyqisXa8_phMGVHc_3G4kL-19gPukXQ-AfJpI53</recordid><startdate>20040601</startdate><enddate>20040601</enddate><creator>TERTERIAN, S</creator><creator>CHU, M</creator><creator>MESROPIAN, S</creator><creator>GURGENIAN, H</creator><creator>BENSON, J. 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H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-370b031ef9ee7e1b947633783630f813e269a7ff1788f4aa4b67792423a40ff63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Cadmium zinc telluride</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping and impurity implantation in iii-v and ii-vi semiconductors</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Infrared radiation</topic><topic>Ion implantation</topic><topic>Materials science</topic><topic>Mercury cadmium telluride</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Sensors</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TERTERIAN, S</creatorcontrib><creatorcontrib>CHU, M</creatorcontrib><creatorcontrib>MESROPIAN, S</creatorcontrib><creatorcontrib>GURGENIAN, H</creatorcontrib><creatorcontrib>BENSON, J. 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D</au><au>DINAN, J. H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance characteristics of planar ion-implantation isolated heterojunction, near-infrared, and short-wave infrared hgcdte devices</atitle><jtitle>Journal of electronic materials</jtitle><date>2004-06-01</date><risdate>2004</risdate><volume>33</volume><issue>6</issue><spage>615</spage><epage>620</epage><pages>615-620</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Two-dimensional near-infrared (NIR) and short-wave infrared (SWIR) HgCdTe arrays have been produced using planar ion-implantation isolated heterojunction (PI3H) device technology. This paper is an extension of an earlier study in which focal plane arrays (FPAs) were fabricated based on heterojunction-mesa and ion-implanted planar device structures. The PI3H device structure is pursued in order to verify whether it can encompass both the superb multilayer characteristics of heterojunction detectors as well as the planar integrity of ion-implanted devices. The PI3H devices are characterized, and R^sub 0^A measurements are carried out at different temperatures and compared to those obtained from heterojunction-mesa and ion-implanted device structures. Data shows the PI3H devices to be superior to both heterojunction-mesa and ion-implanted detectors at temperatures between 130 K and 300 K. Performance characteristics of the thermoelectric (TE) cooled SWIR FPAs with 320 × 256 format, as well as NIR FPAs with 640 × 512 format based on the PI3H device structure are also discussed. [PUBLICATION ABSTRACT] Key words: HgCdTe, CdZnTe, focal plane array (FPA), near infrared (NIR), short-wave infrared (SWIR), infrared detectors</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-004-0056-3</doi><tpages>6</tpages></addata></record> |
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| subjects | Cadmium zinc telluride Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Growth from melts zone melting and refining Infrared radiation Ion implantation Materials science Mercury cadmium telluride Methods of crystal growth physics of crystal growth Physics Sensors Structure of solids and liquids crystallography |
| title | Performance characteristics of planar ion-implantation isolated heterojunction, near-infrared, and short-wave infrared hgcdte devices |
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