Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress, σ and strain, ɛ in the strained-Si layers are estimated from analysis of th...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.192-194
Hauptverfasser:	Perova, T.S., Lyutovich, K., Kasper, E., Waldron, A., Oehme, M., Moore, R.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxial silicon Germanium Raman spectroscopy Silicon
Online-Zugang:	Volltext
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