Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates
Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress, σ and strain, ɛ in the strained-Si layers are estimated from analysis of th...
Gespeichert in:
| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.192-194 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 194 |
|---|---|
| container_issue | 3 |
| container_start_page | 192 |
| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
| container_volume | 135 |
| creator | Perova, T.S. Lyutovich, K. Kasper, E. Waldron, A. Oehme, M. Moore, R.A. |
| description | Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress,
σ and strain,
ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions. |
| doi_str_mv | 10.1016/j.mseb.2006.08.002 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29906187</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921510706004521</els_id><sourcerecordid>29906187</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-ac2829ea991721a3202461905924276716aebb5792890d0a31f2913fe8b8b18a3</originalsourceid><addsrcrecordid>eNp9kMFKw0AQhhdRsFZfwFNO3hJnJmmyC16kaBUKPVTPyyaZ6JY0qbubim9vQj17Gvjn_wbmE-IWIUHA_H6X7D2XCQHkCcgEgM7EDGWRxpnKsnMxA0UYLxCKS3Hl_Q4AkIhmYrMNjr2Pag7s9rYzwfZdZLvIB2dsx3W8tdGH67-7aMyHdkzj8Dnut3bF0dG6MJg28kM59QP7a3HRmNbzzd-ci_fnp7flS7zerF6Xj-u4SlMMsalIkmKjFBaEJiWgLEcFC0UZFXmBueGyXBSKpIIaTIoNKUwblqUsUZp0Lu5Odw-u_xrYB723vuK2NR33g9ekFOSTgLmgU7FyvfeOG31wdm_cj0bQkzu905M7PbnTIPXoboQeThCPLxwtO-0ry13FtXVcBV339j_8F1dUd14</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29906187</pqid></control><display><type>article</type><title>Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Perova, T.S. ; Lyutovich, K. ; Kasper, E. ; Waldron, A. ; Oehme, M. ; Moore, R.A.</creator><creatorcontrib>Perova, T.S. ; Lyutovich, K. ; Kasper, E. ; Waldron, A. ; Oehme, M. ; Moore, R.A.</creatorcontrib><description>Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress,
σ and strain,
ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2006.08.002</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Epitaxial silicon ; Germanium ; Raman spectroscopy ; Silicon</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.192-194</ispartof><rights>2006 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-ac2829ea991721a3202461905924276716aebb5792890d0a31f2913fe8b8b18a3</citedby><cites>FETCH-LOGICAL-c331t-ac2829ea991721a3202461905924276716aebb5792890d0a31f2913fe8b8b18a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2006.08.002$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Perova, T.S.</creatorcontrib><creatorcontrib>Lyutovich, K.</creatorcontrib><creatorcontrib>Kasper, E.</creatorcontrib><creatorcontrib>Waldron, A.</creatorcontrib><creatorcontrib>Oehme, M.</creatorcontrib><creatorcontrib>Moore, R.A.</creatorcontrib><title>Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress,
σ and strain,
ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions.</description><subject>Epitaxial silicon</subject><subject>Germanium</subject><subject>Raman spectroscopy</subject><subject>Silicon</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKw0AQhhdRsFZfwFNO3hJnJmmyC16kaBUKPVTPyyaZ6JY0qbubim9vQj17Gvjn_wbmE-IWIUHA_H6X7D2XCQHkCcgEgM7EDGWRxpnKsnMxA0UYLxCKS3Hl_Q4AkIhmYrMNjr2Pag7s9rYzwfZdZLvIB2dsx3W8tdGH67-7aMyHdkzj8Dnut3bF0dG6MJg28kM59QP7a3HRmNbzzd-ci_fnp7flS7zerF6Xj-u4SlMMsalIkmKjFBaEJiWgLEcFC0UZFXmBueGyXBSKpIIaTIoNKUwblqUsUZp0Lu5Odw-u_xrYB723vuK2NR33g9ekFOSTgLmgU7FyvfeOG31wdm_cj0bQkzu905M7PbnTIPXoboQeThCPLxwtO-0ry13FtXVcBV339j_8F1dUd14</recordid><startdate>20061215</startdate><enddate>20061215</enddate><creator>Perova, T.S.</creator><creator>Lyutovich, K.</creator><creator>Kasper, E.</creator><creator>Waldron, A.</creator><creator>Oehme, M.</creator><creator>Moore, R.A.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20061215</creationdate><title>Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates</title><author>Perova, T.S. ; Lyutovich, K. ; Kasper, E. ; Waldron, A. ; Oehme, M. ; Moore, R.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-ac2829ea991721a3202461905924276716aebb5792890d0a31f2913fe8b8b18a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Epitaxial silicon</topic><topic>Germanium</topic><topic>Raman spectroscopy</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Perova, T.S.</creatorcontrib><creatorcontrib>Lyutovich, K.</creatorcontrib><creatorcontrib>Kasper, E.</creatorcontrib><creatorcontrib>Waldron, A.</creatorcontrib><creatorcontrib>Oehme, M.</creatorcontrib><creatorcontrib>Moore, R.A.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Perova, T.S.</au><au>Lyutovich, K.</au><au>Kasper, E.</au><au>Waldron, A.</au><au>Oehme, M.</au><au>Moore, R.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2006-12-15</date><risdate>2006</risdate><volume>135</volume><issue>3</issue><spage>192</spage><epage>194</epage><pages>192-194</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress,
σ and strain,
ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2006.08.002</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.192-194 |
| issn | 0921-5107 1873-4944 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29906187 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Epitaxial silicon Germanium Raman spectroscopy Silicon |
| title | Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T23%3A45%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stress%20determination%20in%20strained-Si%20grown%20on%20ultra-thin%20SiGe%20virtual%20substrates&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=Perova,%20T.S.&rft.date=2006-12-15&rft.volume=135&rft.issue=3&rft.spage=192&rft.epage=194&rft.pages=192-194&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/j.mseb.2006.08.002&rft_dat=%3Cproquest_cross%3E29906187%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29906187&rft_id=info:pmid/&rft_els_id=S0921510706004521&rfr_iscdi=true |