Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates

Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress, σ and strain, ɛ in the strained-Si layers are estimated from analysis of th...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.192-194
Hauptverfasser: Perova, T.S., Lyutovich, K., Kasper, E., Waldron, A., Oehme, M., Moore, R.A.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial silicon
Germanium
Raman spectroscopy
Silicon
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Zusammenfassung:Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress, σ and strain, ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2006.08.002