Nickel nanoparticle deposition at room temperature for memory applications

In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO 2 layer followed by the deposition of HfO 2 as a control insu...

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Veröffentlicht in:Microelectronic engineering 2007-09, Vol.84 (9), p.1994-1997
Hauptverfasser: Verrelli, E., Tsoukalas, D., Giannakopoulos, K., Kouvatsos, D., Normand, P., Ioannou, D.E.
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container_end_page 1997
container_issue 9
container_start_page 1994
container_title Microelectronic engineering
container_volume 84
creator Verrelli, E.
Tsoukalas, D.
Giannakopoulos, K.
Kouvatsos, D.
Normand, P.
Ioannou, D.E.
description In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO 2 layer followed by the deposition of HfO 2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.
doi_str_mv 10.1016/j.mee.2007.04.078
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subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Metallic nanoparticles
Microelectronic fabrication (materials and surfaces technology)
Non volatile memory
PVD
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Nickel nanoparticle deposition at room temperature for memory applications
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