Nickel nanoparticle deposition at room temperature for memory applications
In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO 2 layer followed by the deposition of HfO 2 as a control insu...
Gespeichert in:
Veröffentlicht in: | Microelectronic engineering 2007-09, Vol.84 (9), p.1994-1997 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1997 |
---|---|
container_issue | 9 |
container_start_page | 1994 |
container_title | Microelectronic engineering |
container_volume | 84 |
creator | Verrelli, E. Tsoukalas, D. Giannakopoulos, K. Kouvatsos, D. Normand, P. Ioannou, D.E. |
description | In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO
2 layer followed by the deposition of HfO
2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior. |
doi_str_mv | 10.1016/j.mee.2007.04.078 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29902712</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931707004297</els_id><sourcerecordid>29902712</sourcerecordid><originalsourceid>FETCH-LOGICAL-c424t-fef8821cc40419a9dc1395d8fd9643b70ba53ad7638387cd06ab06abaf964e383</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouH78AG-96K01adImxZMsfrLoRc9hNplC1rapSVfYf2_KLnjzMAwz88w7zEvIFaMFo6y-3RQ9YlFSKgsqCirVEVkwJXleVbU6JovEyLzhTJ6Ssxg3NNWCqgV5fXPmC7tsgMGPECZnOswsjj66yfkhgykL3vfZhP2IAaZtwKz1Ieux92GXwTh2zsCMxgty0kIX8fKQz8nn48PH8jlfvT-9LO9XuRGlmPIWW6VKZoyggjXQWMN4U1nV2qYWfC3pGioOVtZccSWNpTWs54A2zTE1z8nNXncM_nuLcdK9iwa7Dgb026jLpqGlZGUC2R40wccYsNVjcD2EnWZUz67pjU6u6dk1TYVOrqWd64M4RANdG2AwLv4tKlVx0YjE3e05TJ_-OAw6GoeDQesCmklb7_658gt7woM9</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29902712</pqid></control><display><type>article</type><title>Nickel nanoparticle deposition at room temperature for memory applications</title><source>Access via ScienceDirect (Elsevier)</source><creator>Verrelli, E. ; Tsoukalas, D. ; Giannakopoulos, K. ; Kouvatsos, D. ; Normand, P. ; Ioannou, D.E.</creator><creatorcontrib>Verrelli, E. ; Tsoukalas, D. ; Giannakopoulos, K. ; Kouvatsos, D. ; Normand, P. ; Ioannou, D.E.</creatorcontrib><description>In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO
2 layer followed by the deposition of HfO
2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2007.04.078</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Dielectric, amorphous and glass solid devices ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Metallic nanoparticles ; Microelectronic fabrication (materials and surfaces technology) ; Non volatile memory ; PVD ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2007-09, Vol.84 (9), p.1994-1997</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-fef8821cc40419a9dc1395d8fd9643b70ba53ad7638387cd06ab06abaf964e383</citedby><cites>FETCH-LOGICAL-c424t-fef8821cc40419a9dc1395d8fd9643b70ba53ad7638387cd06ab06abaf964e383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2007.04.078$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18853494$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Verrelli, E.</creatorcontrib><creatorcontrib>Tsoukalas, D.</creatorcontrib><creatorcontrib>Giannakopoulos, K.</creatorcontrib><creatorcontrib>Kouvatsos, D.</creatorcontrib><creatorcontrib>Normand, P.</creatorcontrib><creatorcontrib>Ioannou, D.E.</creatorcontrib><title>Nickel nanoparticle deposition at room temperature for memory applications</title><title>Microelectronic engineering</title><description>In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO
2 layer followed by the deposition of HfO
2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Metallic nanoparticles</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Non volatile memory</subject><subject>PVD</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouH78AG-96K01adImxZMsfrLoRc9hNplC1rapSVfYf2_KLnjzMAwz88w7zEvIFaMFo6y-3RQ9YlFSKgsqCirVEVkwJXleVbU6JovEyLzhTJ6Ssxg3NNWCqgV5fXPmC7tsgMGPECZnOswsjj66yfkhgykL3vfZhP2IAaZtwKz1Ieux92GXwTh2zsCMxgty0kIX8fKQz8nn48PH8jlfvT-9LO9XuRGlmPIWW6VKZoyggjXQWMN4U1nV2qYWfC3pGioOVtZccSWNpTWs54A2zTE1z8nNXncM_nuLcdK9iwa7Dgb026jLpqGlZGUC2R40wccYsNVjcD2EnWZUz67pjU6u6dk1TYVOrqWd64M4RANdG2AwLv4tKlVx0YjE3e05TJ_-OAw6GoeDQesCmklb7_658gt7woM9</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Verrelli, E.</creator><creator>Tsoukalas, D.</creator><creator>Giannakopoulos, K.</creator><creator>Kouvatsos, D.</creator><creator>Normand, P.</creator><creator>Ioannou, D.E.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070901</creationdate><title>Nickel nanoparticle deposition at room temperature for memory applications</title><author>Verrelli, E. ; Tsoukalas, D. ; Giannakopoulos, K. ; Kouvatsos, D. ; Normand, P. ; Ioannou, D.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-fef8821cc40419a9dc1395d8fd9643b70ba53ad7638387cd06ab06abaf964e383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Metallic nanoparticles</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Non volatile memory</topic><topic>PVD</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Verrelli, E.</creatorcontrib><creatorcontrib>Tsoukalas, D.</creatorcontrib><creatorcontrib>Giannakopoulos, K.</creatorcontrib><creatorcontrib>Kouvatsos, D.</creatorcontrib><creatorcontrib>Normand, P.</creatorcontrib><creatorcontrib>Ioannou, D.E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Verrelli, E.</au><au>Tsoukalas, D.</au><au>Giannakopoulos, K.</au><au>Kouvatsos, D.</au><au>Normand, P.</au><au>Ioannou, D.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nickel nanoparticle deposition at room temperature for memory applications</atitle><jtitle>Microelectronic engineering</jtitle><date>2007-09-01</date><risdate>2007</risdate><volume>84</volume><issue>9</issue><spage>1994</spage><epage>1997</epage><pages>1994-1997</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO
2 layer followed by the deposition of HfO
2 as a control insulator. Memory windows of ∼1.5V are observed in MOS capacitors at gate pulse voltages of 8V. Charge retention for write and erase state clearly indicate long time charge storage behavior.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2007.04.078</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0167-9317 |
ispartof | Microelectronic engineering, 2007-09, Vol.84 (9), p.1994-1997 |
issn | 0167-9317 1873-5568 |
language | eng |
recordid | cdi_proquest_miscellaneous_29902712 |
source | Access via ScienceDirect (Elsevier) |
subjects | Applied sciences Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Metallic nanoparticles Microelectronic fabrication (materials and surfaces technology) Non volatile memory PVD Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Nickel nanoparticle deposition at room temperature for memory applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T05%3A51%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nickel%20nanoparticle%20deposition%20at%20room%20temperature%20for%20memory%20applications&rft.jtitle=Microelectronic%20engineering&rft.au=Verrelli,%20E.&rft.date=2007-09-01&rft.volume=84&rft.issue=9&rft.spage=1994&rft.epage=1997&rft.pages=1994-1997&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2007.04.078&rft_dat=%3Cproquest_cross%3E29902712%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29902712&rft_id=info:pmid/&rft_els_id=S0167931707004297&rfr_iscdi=true |