Air-Stable n-Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups
Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated subs...
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| Veröffentlicht in: | Advanced materials (Weinheim) 2007-04, Vol.19 (8), p.1123-1127 |
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| container_title | Advanced materials (Weinheim) |
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| creator | Ling, M.-M. Erk, P. Gomez, M. Koenemann, M. Locklin, J. Bao, Z. |
| description | Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors. |
| doi_str_mv | 10.1002/adma.200601705 |
| format | Article |
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Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200601705</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Field-effect mobility ; organic ; Semiconductors ; Semiconductors, organic ; Structure-property relationships ; Transistors</subject><ispartof>Advanced materials (Weinheim), 2007-04, Vol.19 (8), p.1123-1127</ispartof><rights>Copyright © 2007 WILEY‐VCH Verlag GmbH & Co. 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Mater</addtitle><description>Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors.</description><subject>Field-effect mobility</subject><subject>organic</subject><subject>Semiconductors</subject><subject>Semiconductors, organic</subject><subject>Structure-property relationships</subject><subject>Transistors</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkD1v2zAURYmgBeI6WTNz6iaXpCRKHF0lcQrYTQDnYyQo8slmK5EuKcU10B9fGS6CbJ3uw8U9bzgIXVEyo4SwL8p0asYI4YQWJD9DE5ozmmRE5B_QhIg0TwTPynP0KcYfhBDBCZ-gP3MbknWv6hawS6qtcg5afB82ylmN19BZ7Z0ZdO9DxF9VBIO9ww8QDi04wNfWdtaMCcG-qt6-QsR722_90ON1H7zb4JsW9PHCL2NvgtrbsVwEP-ziBfrYqDbC5b-coqfbm8fqLlneL75V82WiM5blSQm8qKGEUpms5tBkGkoBhmrGa9aQglOe15SxrMlZk-qSpLrRtaiNTrkBUOkUfT793QX_a4DYy85GDW2rHPghSibE0Vk2DmenoQ4-xgCN3AXbqXCQlMijZHmULN8kj4A4AXvbwuE_azm_Xs3fs8mJtbGH32-sCj8lL9Iily_fF_JxWbHn57tKrtK_AkSTQw</recordid><startdate>20070420</startdate><enddate>20070420</enddate><creator>Ling, M.-M.</creator><creator>Erk, P.</creator><creator>Gomez, M.</creator><creator>Koenemann, M.</creator><creator>Locklin, J.</creator><creator>Bao, Z.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20070420</creationdate><title>Air-Stable n-Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups</title><author>Ling, M.-M. ; Erk, P. ; Gomez, M. ; Koenemann, M. ; Locklin, J. ; Bao, Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4245-8e67be8e8ad4b6ef4ce89ed1c26b2f076165b1224f52f3c803cfcb9bdc36deea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Field-effect mobility</topic><topic>organic</topic><topic>Semiconductors</topic><topic>Semiconductors, organic</topic><topic>Structure-property relationships</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ling, M.-M.</creatorcontrib><creatorcontrib>Erk, P.</creatorcontrib><creatorcontrib>Gomez, M.</creatorcontrib><creatorcontrib>Koenemann, M.</creatorcontrib><creatorcontrib>Locklin, J.</creatorcontrib><creatorcontrib>Bao, Z.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ling, M.-M.</au><au>Erk, P.</au><au>Gomez, M.</au><au>Koenemann, M.</au><au>Locklin, J.</au><au>Bao, Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Air-Stable n-Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2007-04-20</date><risdate>2007</risdate><volume>19</volume><issue>8</issue><spage>1123</spage><epage>1127</epage><pages>1123-1127</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/adma.200601705</doi><tpages>5</tpages></addata></record> |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Field-effect mobility organic Semiconductors Semiconductors, organic Structure-property relationships Transistors |
| title | Air-Stable n-Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups |
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