Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes
The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Sch...
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| Veröffentlicht in: | Diamond and related materials 2007-04, Vol.16 (4), p.1020-1024 |
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| container_title | Diamond and related materials |
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| creator | Brezeanu, M. Butler, T. Rupesinghe, N.L. Amaratunga, G.A.J. Rashid, S.J. Udrea, F. Avram, M. Brezeanu, G. |
| description | The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. |
| doi_str_mv | 10.1016/j.diamond.2007.01.016 |
| format | Article |
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This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2007.01.016</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Diodes ; Electronic device structures ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; High power electronics ; Materials science ; p-type doping ; Physics ; Schottky diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Specific materials ; Surface and interface electron states ; Surface states, band structure, electron density of states</subject><ispartof>Diamond and related materials, 2007-04, Vol.16 (4), p.1020-1024</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-ca9ef6d9663657d06850c603bf1c556b4aaacb7b4744f1a415b6495e68f90b6d3</citedby><cites>FETCH-LOGICAL-c370t-ca9ef6d9663657d06850c603bf1c556b4aaacb7b4744f1a415b6495e68f90b6d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925963507001239$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18759900$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Brezeanu, M.</creatorcontrib><creatorcontrib>Butler, T.</creatorcontrib><creatorcontrib>Rupesinghe, N.L.</creatorcontrib><creatorcontrib>Amaratunga, G.A.J.</creatorcontrib><creatorcontrib>Rashid, S.J.</creatorcontrib><creatorcontrib>Udrea, F.</creatorcontrib><creatorcontrib>Avram, M.</creatorcontrib><creatorcontrib>Brezeanu, G.</creatorcontrib><title>Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes</title><title>Diamond and related materials</title><description>The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diodes</subject><subject>Electronic device structures</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>High power electronics</subject><subject>Materials science</subject><subject>p-type doping</subject><subject>Physics</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISSN: 0925-9635 |
| ispartof | Diamond and related materials, 2007-04, Vol.16 (4), p.1020-1024 |
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| language | eng |
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| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Diodes Electronic device structures Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Fullerenes and related materials diamonds, graphite High power electronics Materials science p-type doping Physics Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Surface and interface electron states Surface states, band structure, electron density of states |
| title | Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes |
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