Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP
We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to elimin...
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| Veröffentlicht in: | Solar Energy Materials and Solar Cells 2007-06, Vol.91 (10), p.908-918 |
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| container_title | Solar Energy Materials and Solar Cells |
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| creator | AHRENKIEL, S. P WANLASS, M. W CARAPELLA, J. J AHRENKIEL, R. K JOHNSTON, S. W GEDVILAS, L. M |
| description | We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to eliminate strain in the active layer, thus avoiding misfit dislocations and surface topography that would otherwise form to relieve strain. The optimized structure uses an 'overshoot' with respect to the conventional design in the misfit and As composition of the InAsyP1-y buffer. Nearly optimized heterostructures typically show excellent structural quality and extended minority-carrier lifetimes. |
| doi_str_mv | 10.1016/j.solmat.2007.02.008 |
| format | Article |
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The optimized structure uses an 'overshoot' with respect to the conventional design in the misfit and As composition of the InAsyP1-y buffer. 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(NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP</atitle><jtitle>Solar Energy Materials and Solar Cells</jtitle><date>2007-06-01</date><risdate>2007</risdate><volume>91</volume><issue>10</issue><spage>908</spage><epage>918</epage><pages>908-918</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>We optimize InAsyP1-y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to eliminate strain in the active layer, thus avoiding misfit dislocations and surface topography that would otherwise form to relieve strain. The optimized structure uses an 'overshoot' with respect to the conventional design in the misfit and As composition of the InAsyP1-y buffer. Nearly optimized heterostructures typically show excellent structural quality and extended minority-carrier lifetimes.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.solmat.2007.02.008</doi><tpages>11</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Energy Equipments, installations and applications Exact sciences and technology MATERIALS SCIENCE Natural energy Photovoltaic conversion SOLAR ENERGY Solar Energy - Photovoltaics |
| title | Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1-xAs/InAsyP1-y double-heterostructures on InP |
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