Influence of bias-temperature stressing on the electrical characteristics of SiOC:H film with Cu/TaN/Ta-gated capacitor

Experiments on bias-temperature stressing, capacitance-voltage measurements, current-voltage characteristics, and time-dependent dielectric breakdown were performed to evaluate the reliability of Cu and low-k SiOC:H integration. A high leakage current of ~8 × 10^sup -10^ to 2 × 10^sup -8^ A/cm^sup 2...

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Veröffentlicht in:	Journal of electronic materials 2006-07, Vol.35 (7), p.1523-1529
Hauptverfasser:	TSAI, Kou-Chiang, WU, Wen-Fa, CHAO, Chuen-Guang
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Copper Dielectric breakdown and space-charge effects Dielectric properties of solids and liquids Dielectrics Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Ions Materials science Physics
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